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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleVS-60EPF10PBF
Vishay General Semiconductor - Diodes Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

VS-60EPF10PBF - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
VS-60EPF10PBF
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-VS-60EPF10PBF
ECAD modèl
Pati Deskripsyon
DIODE GP 1KV 60A TO247AC
Deskripsyon detaye
Pake
TO-247-2
Done fèy
VS-60EPF10PBF.pdf
RoHs Status
Nan stok: 4920

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Kantite

Espesifikasyon

Espesifikasyon VS-60EPF10PBF Tech
Vishay General Semiconductor - Diodes Division - VS-60EPF10PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - VS-60EPF10PBF

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.4 V @ 60 A  
Voltage - DC ranvèse (Vr) (Max) 1000 V  
Teknoloji Standard  
Founisè Aparèy pake TO-247AC Modified  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri -  
Tan rekiperasyon ranvèse (trr) 480 ns  
Pwodwi atribi Valè atribi  
Pake / Ka TO-247-2  
Pakèt Tube  
Operating Tanperati - Junction -40°C ~ 150°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 100 µA @ 1000 V  
Kouran - Mwayèn Rectified (Io) 60A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz 60EPF10  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division VS-60EPF10PBF.

Pwodwi atribi VS-60EPF10PBF VS-60EPS12-M3 VS-60EPS08-M3 VS-60EPU02-N3
Nimewo Pati VS-60EPF10PBF VS-60EPS12-M3 VS-60EPS08-M3 VS-60EPU02-N3
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Voltage - DC ranvèse (Vr) (Max) 1000 V 1200 V 800 V 200 V
Kouran - Mwayèn Rectified (Io) 60A 60A 60A 60A
Kouran - Reverse Leakage @ Vr 100 µA @ 1000 V 100 µA @ 1200 V 100 µA @ 800 V 50 µA @ 200 V
Tan rekiperasyon ranvèse (trr) 480 ns - - 28 ns
Pakèt Tube Tube Tube Tube
Voltage - Forward (Vf) (Max) @ Si 1.4 V @ 60 A 1.09 V @ 60 A 1.09 V @ 60 A 1.08 V @ 60 A
Pake / Ka TO-247-2 TO-247-2 TO-247-2 TO-247-2
Kapasite @ Vr, F - - - -
Founisè Aparèy pake TO-247AC Modified TO-247AC Modified TO-247AC Modified TO-247AC Modified
Nimewo pwodwi baz 60EPF10 60EPS12 60EPS08 60EPU02
Teknoloji Standard Standard Standard Standard
Seri - - - FRED Pt®
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Vitès Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Operating Tanperati - Junction -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C -55°C ~ 175°C

VS-60EPF10PBF fich PDF

Download VS-60EPF10PBF PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou VS-60EPF10PBF - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
DD-005-2014-Rev-0 03/Mar/2014.pdf
PCN Lòt
DD-018-2015-Rev-00 25/May/2015.pdf
PCN obsolescence/ eol
Mult Dev EOL 13/Sep/2019.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
Vishay General Semiconductor - Diodes Division

VS-60EPF10PBF

Vishay General Semiconductor - Diodes Division
32D-VS-60EPF10PBF

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