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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleVS-8EWS16STRPBF
Vishay General Semiconductor - Diodes Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

VS-8EWS16STRPBF - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
VS-8EWS16STRPBF
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-VS-8EWS16STRPBF
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 1.6KV 8A D-PAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
VS-8EWS16SPbF.pdf
RoHs Status
Nan stok: 4800

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon VS-8EWS16STRPBF Tech
Vishay General Semiconductor - Diodes Division - VS-8EWS16STRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - VS-8EWS16STRPBF

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 8 A  
Voltage - DC ranvèse (Vr) (Max) 1600 V  
Teknoloji Standard  
Founisè Aparèy pake D-PAK (TO-252AA)  
Vitès Standard Recovery >500ns, > 200mA (Io)  
Seri -  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -40°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 50 µA @ 1600 V  
Kouran - Mwayèn Rectified (Io) 8A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz 8EWS16  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division VS-8EWS16STRPBF.

Pwodwi atribi VS-8EWS16STRPBF VS-8TQ100PBF VS-8EWX06FN-M3 VS-8EWS12STRLPBF
Nimewo Pati VS-8EWS16STRPBF VS-8TQ100PBF VS-8EWX06FN-M3 VS-8EWS12STRLPBF
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Teknoloji Standard Schottky Standard Standard
Operating Tanperati - Junction -40°C ~ 150°C -55°C ~ 175°C -65°C ~ 175°C -55°C ~ 150°C
Vitès Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Kouran - Mwayèn Rectified (Io) 8A 8A 8A 8A
Nimewo pwodwi baz 8EWS16 8TQ100 8EWX06 8EWS12
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 8 A 720 mV @ 8 A 3 V @ 8 A 1.1 V @ 8 A
Voltage - DC ranvèse (Vr) (Max) 1600 V 100 V 600 V 1200 V
Pakèt Tape & Reel (TR) Tube Tube Tape & Reel (TR)
Kapasite @ Vr, F - 500pF @ 5V, 1MHz - -
Kouran - Reverse Leakage @ Vr 50 µA @ 1600 V 550 µA @ 100 V 50 µA @ 600 V 50 µA @ 1200 V
Founisè Aparèy pake D-PAK (TO-252AA) TO-220AC TO-252, (D-Pak) D-PAK (TO-252AA)
Seri - - FRED Pt® -
Mounting Kalite Surface Mount Through Hole Surface Mount Surface Mount
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-2 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

VS-8EWS16STRPBF fich PDF

Download VS-8EWS16STRPBF PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou VS-8EWS16STRPBF - Vishay General Semiconductor - Diodes Division.

PCN Lòt
DD-018-2015-Rev-00 25/May/2015.pdf
PCN obsolescence/ eol
Halogen Dev Eol 12/Sep/2016.pdf
Fich
VS-8EWS16SPbF.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
Vishay General Semiconductor - Diodes Division

VS-8EWS16STRPBF

Vishay General Semiconductor - Diodes Division
32D-VS-8EWS16STRPBF

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