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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleVS-90EPS12L-M3
Vishay General Semiconductor - Diodes Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

VS-90EPS12L-M3 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
VS-90EPS12L-M3
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-VS-90EPS12L-M3
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 1.2KV 90A TO247AD
Deskripsyon detaye
Pake
TO-247-2
Done fèy
VS-90xPS(08,12)L-M3.pdf
RoHs Status
Nan stok: 16602

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Espesifikasyon

Espesifikasyon VS-90EPS12L-M3 Tech
Vishay General Semiconductor - Diodes Division - VS-90EPS12L-M3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - VS-90EPS12L-M3

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.2 V @ 90 A  
Voltage - DC ranvèse (Vr) (Max) 1200 V  
Teknoloji Standard  
Founisè Aparèy pake TO-247AD  
Vitès Standard Recovery >500ns, > 200mA (Io)  
Seri -  
Pake / Ka TO-247-2  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Operating Tanperati - Junction -40°C ~ 150°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 100 µA @ 1200 V  
Kouran - Mwayèn Rectified (Io) 90A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz 90EPS12  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division VS-90EPS12L-M3.

Pwodwi atribi VS-90EPS12L-M3 VS-E4TU2006FP-N3 VS-8TQ100PBF VS-8TQ100STRLPBF
Nimewo Pati VS-90EPS12L-M3 VS-E4TU2006FP-N3 VS-8TQ100PBF VS-8TQ100STRLPBF
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Seri - FRED Pt® - -
Pakèt Tube Tube Tube Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ Si 1.2 V @ 90 A 1.63 V @ 20 A 720 mV @ 8 A 720 mV @ 8 A
Pake / Ka TO-247-2 TO-220-2 Full Pack TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Nimewo pwodwi baz 90EPS12 E4TU2006 8TQ100 8TQ100
Voltage - DC ranvèse (Vr) (Max) 1200 V 600 V 100 V 100 V
Mounting Kalite Through Hole Through Hole Through Hole Surface Mount
Teknoloji Standard Standard Schottky Schottky
Vitès Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Kapasite @ Vr, F - - 500pF @ 5V, 1MHz 500pF @ 5V, 1MHz
Operating Tanperati - Junction -40°C ~ 150°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C
Founisè Aparèy pake TO-247AD TO-220-2 Full Pack TO-220AC TO-263AB (D²PAK)
Kouran - Reverse Leakage @ Vr 100 µA @ 1200 V 15 µA @ 600 V 550 µA @ 100 V 550 µA @ 100 V
Kouran - Mwayèn Rectified (Io) 90A 20A 8A 8A

VS-90EPS12L-M3 fich PDF

Download VS-90EPS12L-M3 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou VS-90EPS12L-M3 - Vishay General Semiconductor - Diodes Division.

PCN konsepsyon/spesifikasyon
Mult Dev Mold Chg 13/Sep/2019.pdf
Fich
VS-90xPS(08,12)L-M3.pdf

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Sètifikasyon & Manm

Wè plis
Vishay General Semiconductor - Diodes Division

VS-90EPS12L-M3

Vishay General Semiconductor - Diodes Division
32D-VS-90EPS12L-M3

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