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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleVS-HFA08PB120-N3
Vishay General Semiconductor - Diodes Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

VS-HFA08PB120-N3 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
VS-HFA08PB120-N3
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-VS-HFA08PB120-N3
ECAD modèl
Pati Deskripsyon
DIODE GP 1.2KV 8A TO247AC
Deskripsyon detaye
Pake
TO-247-2
Done fèy
HFA08PB120PBF.pdf
RoHs Status
Nan stok: 11695

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon VS-HFA08PB120-N3 Tech
Vishay General Semiconductor - Diodes Division - VS-HFA08PB120-N3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - VS-HFA08PB120-N3

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 3.3 V @ 8 A  
Voltage - DC ranvèse (Vr) (Max) 1200 V  
Teknoloji Standard  
Founisè Aparèy pake TO-247AC Modified  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri HEXFRED®  
Tan rekiperasyon ranvèse (trr) 95 ns  
Pwodwi atribi Valè atribi  
Pake / Ka TO-247-2  
Pakèt Tube  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 10 µA @ 1200 V  
Kouran - Mwayèn Rectified (Io) 8A  
Kapasite @ Vr, F -  
Nimewo pwodwi baz HFA08  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division VS-HFA08PB120-N3.

Pwodwi atribi VS-HFA08PB120-N3 VS-HFA08TB60PBF VS-HFA08SD60STR-M3 VS-HFA08TB120-M3
Nimewo Pati VS-HFA08PB120-N3 VS-HFA08TB60PBF VS-HFA08SD60STR-M3 VS-HFA08TB120-M3
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Operating Tanperati - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ Si 3.3 V @ 8 A 1.7 V @ 8 A 1.7 V @ 8 A 4.3 V @ 12 A
Seri HEXFRED® HEXFRED® HEXFRED® HEXFRED®
Nimewo pwodwi baz HFA08 HFA08 HFA08 HFA08
Kouran - Reverse Leakage @ Vr 10 µA @ 1200 V 5 µA @ 600 V 5 µA @ 600 V 10 µA @ 1200 V
Teknoloji Standard Standard Standard Standard
Mounting Kalite Through Hole Through Hole Surface Mount Through Hole
Tan rekiperasyon ranvèse (trr) 95 ns 55 ns 55 ns 95 ns
Kouran - Mwayèn Rectified (Io) 8A 8A 8A 8A
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Kapasite @ Vr, F - - - -
Pakèt Tube Tube Tape & Reel (TR) Tube
Pake / Ka TO-247-2 TO-220-2 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-2
Voltage - DC ranvèse (Vr) (Max) 1200 V 600 V 600 V 1200 V
Founisè Aparèy pake TO-247AC Modified TO-220AC D-PAK (TO-252AA) TO-220AC

VS-HFA08PB120-N3 fich PDF

Download VS-HFA08PB120-N3 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou VS-HFA08PB120-N3 - Vishay General Semiconductor - Diodes Division.

Asanble PCN/orijin
Mult Dev Assembly Chg 13/Sep/2019.pdf
Fich
HFA08PB120PBF.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
Vishay General Semiconductor - Diodes Division

VS-HFA08PB120-N3

Vishay General Semiconductor - Diodes Division
32D-VS-HFA08PB120-N3

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