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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Bridge rèktifikateurVSIB15A60-E3/45
VSIB15A60-E3/45 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

VSIB15A60-E3/45 - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
VSIB15A60-E3/45
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-VSIB15A60-E3/45
ECAD modèl
Pati Deskripsyon
BRIDGE RECT 1P 600V 3.5A GSIB-5S
Deskripsyon detaye
Pake
4-SIP, GSIB-5S
Done fèy
VSIB15A20 - 80.pdf
RoHs Status
Nan stok: 4420

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon VSIB15A60-E3/45 Tech
Vishay General Semiconductor - Diodes Division - VSIB15A60-E3/45 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - VSIB15A60-E3/45

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Peak Ranvèse (Max) 600 V  
Voltage - Forward (Vf) (Max) @ Si 1 V @ 7.5 A  
Teknoloji Standard  
Founisè Aparèy pake GSIB-5S  
Seri -  
Pake / Ka 4-SIP, GSIB-5S  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kalite dyod Single Phase  
Kouran - Reverse Leakage @ Vr 10 µA @ 600 V  
Kouran - Mwayèn Rectified (Io) 3.5 A  
Nimewo pwodwi baz VSIB15  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division VSIB15A60-E3/45.

Pwodwi atribi VSIB15A60-E3/45 GBJ25M GBU807 DB15-16
Nimewo Pati VSIB15A60-E3/45 GBJ25M GBU807 DB15-16
Manifakti Vishay General Semiconductor - Diodes Division SURGE Taiwan Semiconductor Corporation Diotec Semiconductor
Nimewo pwodwi baz VSIB15 - GBU807 -
Founisè Aparèy pake GSIB-5S GBJ(5S) GBU DB-35
Kouran - Reverse Leakage @ Vr 10 µA @ 600 V 5 µA @ 1000 V 5 µA @ 1000 V 10 µA @ 1600 V
Kouran - Mwayèn Rectified (Io) 3.5 A 3.5 A 8 A 25 A
Teknoloji Standard Standard Standard Standard
Voltage - Forward (Vf) (Max) @ Si 1 V @ 7.5 A 1 V @ 12.5 A 1 V @ 1.5 A 1.05 V @ 12.5 A
Voltage - Peak Ranvèse (Max) 600 V 1 kV 1 kV 1.6 kV
Pakèt Tube Bag Tube Box
Kalite dyod Single Phase Single Phase Single Phase Three Phase
Pake / Ka 4-SIP, GSIB-5S 4-SIP, KBJ 4-SIP, GBU 5-Square, DB-35
Mounting Kalite Through Hole Through Hole Through Hole Chassis Mount
Seri - - - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -50°C ~ 150°C (TJ)

VSIB15A60-E3/45 fich PDF

Download VSIB15A60-E3/45 PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou VSIB15A60-E3/45 - Vishay General Semiconductor - Diodes Division.

Lòt dokiman ki gen rapò
Packaging Information.pdf
Fich
VSIB15A20 - 80.pdf

Shipment

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Sètifikasyon & Manm

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VSIB15A60-E3/45 Image

VSIB15A60-E3/45

Vishay General Semiconductor - Diodes Division
32D-VSIB15A60-E3/45

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