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KayPwodwi yoIzolanOptoisolators - Transistor, Photovoltaic SòtiCNY65ABST
CNY65ABST Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

CNY65ABST - Vishay Semiconductor Opto Division

Manifakti Nimewo Pati
CNY65ABST
Manifakti
Vishay Semiconductor - Opto Division
Allelco Nimewo Pati
32D-CNY65ABST
ECAD modèl
Pati Deskripsyon
OPTOISOLATOR 13.9KV TRANS 4-SMD
Deskripsyon detaye
Pake
4-SMD, Gull Wing
Done fèy
Cylindrical Battery Holders.pdf
Cylindrical Battery Holders.pdf
RoHs Status
Nan stok: 18397

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon CNY65ABST Tech
Vishay Semiconductor Opto Division - CNY65ABST espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Semiconductor Opto Division - CNY65ABST

Pwodwi atribi Valè atribi  
Manifakti Vishay Semiconductor - Opto Division  
Voltage - Sòti (Max) 32V  
Voltage - Izolasyon 13900VDC  
Voltage - Forward (Vf) (tip) 1.32V  
Vce Saturation (Max) 300mV  
Vire sou / chanje tan (tip) 5µs, 3µs  
Founisè Aparèy pake 4-SMD  
Seri -  
Leve / tonbe tan (tip) 2.4µs, 2.7µs  
Pake / Ka 4-SMD, Gull Wing  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Kalite Sòti Transistor  
Operating Tanperati -55°C ~ 85°C  
Nimewo Chanèl 1  
Mounting Kalite Surface Mount  
Kalite Antre DC  
Kouran Transfè Pwopòsyon (Min) 80% @ 5mA  
Kouran Transfè Pwopòsyon (Max) 240% @ 5mA  
Kouran - Sòti / Chèn 50mA  
Kouran - DC Forward (Si) (Max) 75 mA  
Nimewo pwodwi baz CNY65  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Semiconductor Opto Division CNY65ABST.

Pwodwi atribi CNY65ABST CNY65A CNY65EXI CNY64B
Nimewo Pati CNY65ABST CNY65A CNY65EXI CNY64B
Manifakti Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division
Founisè Aparèy pake 4-SMD 4-DIP 4-DIP 4-DIP
Kouran Transfè Pwopòsyon (Max) 240% @ 5mA 125% @ 10mA 300% @ 5mA 200% @ 10mA
Kouran - DC Forward (Si) (Max) 75 mA 75 mA 75 mA 75 mA
Kalite Sòti Transistor Transistor Transistor Transistor
Seri - - - -
Nimewo Chanèl 1 1 1 1
Kouran Transfè Pwopòsyon (Min) 80% @ 5mA 63% @ 10mA 50% @ 5mA 100% @ 10mA
Operating Tanperati -55°C ~ 85°C -55°C ~ 85°C -55°C ~ 100°C -55°C ~ 85°C
Pake / Ka 4-SMD, Gull Wing 4-EDIP (0.300', 7.62mm) 4-DIP (0.300", 7.62mm) 4-DIP (0.200", 5.08mm)
Voltage - Sòti (Max) 32V 32V 32V 32V
Kalite Antre DC DC DC DC
Voltage - Izolasyon 13900VDC 13900VDC 11600VDC 8200Vrms
Vce Saturation (Max) 300mV 300mV 300mV 300mV
Leve / tonbe tan (tip) 2.4µs, 2.7µs 2.4µs, 2.7µs 2.4µs, 2.4µs 2.4µs, 2.7µs
Kouran - Sòti / Chèn 50mA 50mA 50mA 50mA
Nimewo pwodwi baz CNY65 CNY65 CNY65 CNY64
Voltage - Forward (Vf) (tip) 1.32V 1.25V 1.25V 1.25V
Pakèt Tape & Reel (TR) Tube Tube Tube
Mounting Kalite Surface Mount Through Hole Through Hole Through Hole
Vire sou / chanje tan (tip) 5µs, 3µs 5µs, 3µs 5µs, 3µs 5µs, 3µs

CNY65ABST fich PDF

Download CNY65ABST PDF fich ak dokiman Vishay Semiconductor Opto Division pou CNY65ABST - Vishay Semiconductor Opto Division.

Fich
Cylindrical Battery Holders.pdf
Html fich
Cylindrical Battery Holders.pdf
Asanble PCN/orijin
2.73KHz.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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CNY65ABST Image

CNY65ABST

Vishay Semiconductor Opto Division
32D-CNY65ABST

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