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KayPwodwi yoIzolanOptoisolators - Transistor, Photovoltaic SòtiH11A1-X009
Vishay Semiconductor Opto Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

H11A1-X009 - Vishay Semiconductor Opto Division

Manifakti Nimewo Pati
H11A1-X009
Manifakti
Vishay Semiconductor - Opto Division
Allelco Nimewo Pati
32D-H11A1-X009
ECAD modèl
Pati Deskripsyon
OPTOISO 5.3KV TRANS W/BASE 6SMD
Deskripsyon detaye
Pake
6-SMD, Gull Wing
Done fèy
H11A1,2,3,4,5.pdf
RoHs Status
Nan stok: 3960

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon H11A1-X009 Tech
Vishay Semiconductor Opto Division - H11A1-X009 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Semiconductor Opto Division - H11A1-X009

Pwodwi atribi Valè atribi  
Manifakti Vishay Semiconductor - Opto Division  
Voltage - Sòti (Max) 70V  
Voltage - Izolasyon 5300Vrms  
Voltage - Forward (Vf) (tip) 1.1V  
Vce Saturation (Max) 400mV  
Vire sou / chanje tan (tip) 3µs, 3µs  
Founisè Aparèy pake 6-SMD  
Seri -  
Leve / tonbe tan (tip) -  
Pake / Ka 6-SMD, Gull Wing  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Kalite Sòti Transistor with Base  
Operating Tanperati -55°C ~ 100°C  
Nimewo Chanèl 1  
Mounting Kalite Surface Mount  
Kalite Antre DC  
Kouran Transfè Pwopòsyon (Min) 50% @ 10mA  
Kouran Transfè Pwopòsyon (Max) -  
Kouran - Sòti / Chèn 50mA  
Kouran - DC Forward (Si) (Max) 60 mA  
Nimewo pwodwi baz H11  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Semiconductor Opto Division H11A1-X009.

Pwodwi atribi H11A1-X009 H11A1SM H11A1S H11A1M
Nimewo Pati H11A1-X009 H11A1SM H11A1S H11A1M
Manifakti Vishay Semiconductor Opto Division onsemi Lite-On Inc. Everlight Electronics Co Ltd
Pake / Ka 6-SMD, Gull Wing 6-SMD, Gull Wing 6-SMD, Gull Wing 6-DIP (0.400", 10.16mm)
Leve / tonbe tan (tip) - - 2.8µs, 4.5µs -
Voltage - Sòti (Max) 70V 30V 30V 80V
Kouran - Sòti / Chèn 50mA - 150mA -
Nimewo Chanèl 1 1 1 1
Kouran - DC Forward (Si) (Max) 60 mA 60 mA 60 mA 60 mA
Vce Saturation (Max) 400mV 400mV 400mV 400mV
Kalite Sòti Transistor with Base Transistor with Base Transistor with Base Transistor with Base
Voltage - Izolasyon 5300Vrms 4170Vrms 5000Vrms 5000Vrms
Nimewo pwodwi baz H11 H11A1 H11A H11A1
Kouran Transfè Pwopòsyon (Max) - - - -
Kalite Antre DC DC DC DC
Seri - - H11AX -
Founisè Aparèy pake 6-SMD 6-SMD 6-SMD 6-DIP
Vire sou / chanje tan (tip) 3µs, 3µs 2µs, 2µs - 3µs, 3µs
Mounting Kalite Surface Mount Surface Mount Surface Mount Through Hole
Pakèt Tube Tube Tube Tube
Voltage - Forward (Vf) (tip) 1.1V 1.18V 1.2V 1.2V
Kouran Transfè Pwopòsyon (Min) 50% @ 10mA 50% @ 10mA 50% @ 10mA 50% @ 10mA
Operating Tanperati -55°C ~ 100°C -40°C ~ 100°C -55°C ~ 100°C -55°C ~ 110°C

H11A1-X009 fich PDF

Download H11A1-X009 PDF fich ak dokiman Vishay Semiconductor Opto Division pou H11A1-X009 - Vishay Semiconductor Opto Division.

PCN obsolescence/ eol
Mult Dev EOL 9/Nov/2018.pdf
Fich
H11A1,2,3,4,5.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
Vishay Semiconductor Opto Division

H11A1-X009

Vishay Semiconductor Opto Division
32D-H11A1-X009

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