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KayPwodwi yoIzolanOptoisolators - Transistor, Photovoltaic SòtiH11AA1-X007T
H11AA1-X007T Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

H11AA1-X007T - Vishay Semiconductor Opto Division

Manifakti Nimewo Pati
H11AA1-X007T
Manifakti
Vishay Semiconductor - Opto Division
Allelco Nimewo Pati
32D-H11AA1-X007T
ECAD modèl
Pati Deskripsyon
OPTOISO 5.3KV TRANS W/BASE 6SMD
Deskripsyon detaye
Pake
6-SMD, Gull Wing
Done fèy
H11AA1-X007T.pdf
RoHs Status
Nan stok: 56600

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon H11AA1-X007T Tech
Vishay Semiconductor Opto Division - H11AA1-X007T espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Semiconductor Opto Division - H11AA1-X007T

Pwodwi atribi Valè atribi  
Manifakti Vishay Semiconductor - Opto Division  
Voltage - Sòti (Max) 30V  
Voltage - Izolasyon 5300Vrms  
Voltage - Forward (Vf) (tip) 1.2V  
Vce Saturation (Max) 400mV  
Vire sou / chanje tan (tip) -  
Founisè Aparèy pake 6-SMD  
Seri -  
Leve / tonbe tan (tip) -  
Pake / Ka 6-SMD, Gull Wing  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Kalite Sòti Transistor with Base  
Operating Tanperati -55°C ~ 100°C  
Nimewo Chanèl 1  
Mounting Kalite Surface Mount  
Kalite Antre AC, DC  
Kouran Transfè Pwopòsyon (Min) 20% @ 10mA  
Kouran Transfè Pwopòsyon (Max) -  
Kouran - Sòti / Chèn -  
Kouran - DC Forward (Si) (Max) 60 mA  
Nimewo pwodwi baz H11  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Semiconductor Opto Division H11AA1-X007T.

Pwodwi atribi H11AA1-X007T H11AA1 H11AA1 H11AA1-X009T
Nimewo Pati H11AA1-X007T H11AA1 H11AA1 H11AA1-X009T
Manifakti Vishay Semiconductor Opto Division onsemi Quality Technologies Vishay Semiconductor Opto Division
Nimewo Chanèl 1 1 1 1
Kouran Transfè Pwopòsyon (Max) - - - -
Kouran - DC Forward (Si) (Max) 60 mA 100 mA 60 mA 60 mA
Voltage - Forward (Vf) (tip) 1.2V 1.2V 1.17V 1.2V
Voltage - Izolasyon 5300Vrms 5300Vrms - 5300Vrms
Vce Saturation (Max) 400mV 400mV 400mV 400mV
Vire sou / chanje tan (tip) - - - -
Founisè Aparèy pake 6-SMD 6-DIP 6-DIP 6-SMD
Kalite Sòti Transistor with Base Transistor with Base Transistor with Base Transistor with Base
Seri - - - -
Leve / tonbe tan (tip) - - - -
Operating Tanperati -55°C ~ 100°C -55°C ~ 100°C -40°C ~ 100°C -55°C ~ 100°C
Pake / Ka 6-SMD, Gull Wing 6-DIP (0.300', 7.62mm) 6-DIP (0.300", 7.62mm) 6-SMD, Gull Wing
Voltage - Sòti (Max) 30V 30V 30V 30V
Kalite Antre AC, DC AC, DC AC, DC AC, DC
Nimewo pwodwi baz H11 H11A - H11
Kouran Transfè Pwopòsyon (Min) 20% @ 10mA 20% @ 10mA 20% @ 10mA 20% @ 10mA
Kouran - Sòti / Chèn - - 50mA -
Mounting Kalite Surface Mount Through Hole Through Hole Surface Mount
Pakèt Tape & Reel (TR) Tube Box Tape & Reel (TR)

Shipment

Tan livrezon

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Metòd livrezon

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DHL & FedEx Shipment Chaj Referans
Chajman chaj (kg) Referans DHL (USD $)
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Remak:
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Kontakte nou si ou gen nenpòt kesyon.

Sipò pou Peman

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
H11AA1-X007T Image

H11AA1-X007T

Vishay Semiconductor Opto Division
32D-H11AA1-X007T

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