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KayPwodwi yoIzolanOptoisolators - Transistor, Photovoltaic SòtiIL212AT
IL212AT Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IL212AT - Vishay Semiconductor Opto Division

Manifakti Nimewo Pati
IL212AT
Manifakti
Vishay Semiconductor - Opto Division
Allelco Nimewo Pati
32D-IL212AT
ECAD modèl
Pati Deskripsyon
OPTOISO 4KV TRANS W/BASE 8SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
IL21(1-3)AT.pdf
IL21(1-3)AT.pdf
RoHs Status
Nan stok: 117200

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IL212AT Tech
Vishay Semiconductor Opto Division - IL212AT espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Semiconductor Opto Division - IL212AT

Pwodwi atribi Valè atribi  
Manifakti Vishay Semiconductor - Opto Division  
Voltage - Sòti (Max) 30V  
Voltage - Izolasyon 4000Vrms  
Voltage - Forward (Vf) (tip) 1.3V  
Vce Saturation (Max) 400mV  
Vire sou / chanje tan (tip) 3µs, 3µs  
Founisè Aparèy pake 8-SOIC  
Seri -  
Leve / tonbe tan (tip) -  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Kalite Sòti Transistor with Base  
Operating Tanperati -55°C ~ 100°C  
Nimewo Chanèl 1  
Mounting Kalite Surface Mount  
Kalite Antre DC  
Kouran Transfè Pwopòsyon (Min) 50% @ 10mA  
Kouran Transfè Pwopòsyon (Max) -  
Kouran - Sòti / Chèn -  
Kouran - DC Forward (Si) (Max) 60 mA  
Nimewo pwodwi baz IL212  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Semiconductor Opto Division IL212AT.

Pwodwi atribi IL212AT IL213AT IL207AT-3062 IL221AT
Nimewo Pati IL212AT IL213AT IL207AT-3062 IL221AT
Manifakti Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division
Kouran - DC Forward (Si) (Max) 60 mA 60 mA 60 mA 60 mA
Seri - - IL205AT -
Kouran Transfè Pwopòsyon (Max) - - 200% @ 10mA -
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154', 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154', 3.90mm Width)
Vire sou / chanje tan (tip) 3µs, 3µs 3µs, 3µs 3µs, 3µs -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Bulk Tape & Reel (TR)
Vce Saturation (Max) 400mV 400mV 400mV 1V
Operating Tanperati -55°C ~ 100°C -55°C ~ 100°C -55°C ~ 100°C -55°C ~ 100°C
Kalite Sòti Transistor with Base Transistor with Base Transistor with Base Darlington with Base
Kouran Transfè Pwopòsyon (Min) 50% @ 10mA 100% @ 10mA 100% @ 10mA 100% @ 1mA
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kalite Antre DC DC DC DC
Kouran - Sòti / Chèn - - 50mA -
Nimewo Chanèl 1 1 1 1
Voltage - Forward (Vf) (tip) 1.3V 1.3V 1.3V 1V
Voltage - Sòti (Max) 30V 30V 70V 30V
Nimewo pwodwi baz IL212 IL213 - IL221
Leve / tonbe tan (tip) - - - -
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Voltage - Izolasyon 4000Vrms 4000Vrms 4000Vrms 4000Vrms

IL212AT fich PDF

Download IL212AT PDF fich ak dokiman Vishay Semiconductor Opto Division pou IL212AT - Vishay Semiconductor Opto Division.

Fich
IL21(1-3)AT.pdf
Html fich
IL21(1-3)AT.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
IL212AT Image

IL212AT

Vishay Semiconductor Opto Division
32D-IL212AT

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