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KayPwodwi yoIzolanOptoisolators - Transistor, Photovoltaic SòtiMCT5210
Vishay Semiconductor Opto Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

MCT5210 - Vishay Semiconductor Opto Division

Manifakti Nimewo Pati
MCT5210
Manifakti
Vishay Semiconductor - Opto Division
Allelco Nimewo Pati
32D-MCT5210
ECAD modèl
Pati Deskripsyon
OPTOISO 5.3KV TRANS W/BASE 6DIP
Deskripsyon detaye
Pake
6-DIP (0.300", 7.62mm)
Done fèy
MCT5210/11.pdf
RoHs Status
Nan stok: 84970

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon MCT5210 Tech
Vishay Semiconductor Opto Division - MCT5210 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Semiconductor Opto Division - MCT5210

Pwodwi atribi Valè atribi  
Manifakti Vishay Semiconductor - Opto Division  
Voltage - Sòti (Max) 30V  
Voltage - Izolasyon 5300Vrms  
Voltage - Forward (Vf) (tip) 1.2V  
Vce Saturation (Max) 400mV  
Vire sou / chanje tan (tip) 10µs, 10µs  
Founisè Aparèy pake 6-DIP  
Seri -  
Leve / tonbe tan (tip) -  
Pake / Ka 6-DIP (0.300", 7.62mm)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Kalite Sòti Transistor with Base  
Operating Tanperati -55°C ~ 100°C  
Nimewo Chanèl 1  
Mounting Kalite Through Hole  
Kalite Antre DC  
Kouran Transfè Pwopòsyon (Min) 70% @ 3mA  
Kouran Transfè Pwopòsyon (Max) -  
Kouran - Sòti / Chèn -  
Kouran - DC Forward (Si) (Max) 40 mA  
Nimewo pwodwi baz MCT5210  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Semiconductor Opto Division MCT5210.

Pwodwi atribi MCT5210 MCT5200SD MCT5210SD MCT5201S
Nimewo Pati MCT5210 MCT5200SD MCT5210SD MCT5201S
Manifakti Vishay Semiconductor Opto Division onsemi onsemi onsemi
Nimewo Chanèl 1 1 1 1
Leve / tonbe tan (tip) - 1.3µs, 16µs - 2.5µs, 16µs
Pakèt Tube Tape & Reel (TR) Tape & Reel (TR) Tube
Vire sou / chanje tan (tip) 10µs, 10µs 1.6µs, 18µs 10µs, 400ns 3µs, 12µs
Kalite Sòti Transistor with Base Transistor with Base Transistor with Base Transistor with Base
Nimewo pwodwi baz MCT5210 MCT5 MCT5 MCT5
Kalite Antre DC DC DC DC
Vce Saturation (Max) 400mV 400mV 400mV 400mV
Mounting Kalite Through Hole Surface Mount Surface Mount Surface Mount
Operating Tanperati -55°C ~ 100°C -55°C ~ 100°C -55°C ~ 100°C -55°C ~ 100°C
Seri - - - -
Voltage - Sòti (Max) 30V 30V 30V 30V
Pake / Ka 6-DIP (0.300", 7.62mm) 6-SMD, Gull Wing 6-SMD, Gull Wing 6-SMD, Gull Wing
Voltage - Izolasyon 5300Vrms 5300Vrms 5300Vrms 5300Vrms
Founisè Aparèy pake 6-DIP 6-SMD 6-SMD 6-SMD
Kouran Transfè Pwopòsyon (Min) 70% @ 3mA 75% @ 10mA 70% @ 3mA 120% @ 5mA
Kouran - DC Forward (Si) (Max) 40 mA 50 mA 50 mA 50 mA
Kouran - Sòti / Chèn - 150mA 150mA 150mA
Kouran Transfè Pwopòsyon (Max) - - - -
Voltage - Forward (Vf) (tip) 1.2V 1.25V 1.25V 1.25V

MCT5210 fich PDF

Download MCT5210 PDF fich ak dokiman Vishay Semiconductor Opto Division pou MCT5210 - Vishay Semiconductor Opto Division.

Fich
MCT5210/11.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Vishay Semiconductor Opto Division

MCT5210

Vishay Semiconductor Opto Division
32D-MCT5210

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