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KayPwodwi yoIzolanOptoisolators - Transistor, Photovoltaic SòtiTCDT1123G
TCDT1123G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TCDT1123G - Vishay Semiconductor Opto Division

Manifakti Nimewo Pati
TCDT1123G
Manifakti
Vishay Semiconductor - Opto Division
Allelco Nimewo Pati
32D-TCDT1123G
ECAD modèl
Pati Deskripsyon
OPTOISOLATOR 5KV TRANS 6DIP
Deskripsyon detaye
Pake
6-DIP (0.400', 10.16mm)
Done fèy
Cylindrical Battery Holders.pdf
TCDT1120(G).pdf
RoHs Status
Nan stok: 173610

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon TCDT1123G Tech
Vishay Semiconductor Opto Division - TCDT1123G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Semiconductor Opto Division - TCDT1123G

Pwodwi atribi Valè atribi  
Manifakti Vishay Semiconductor - Opto Division  
Voltage - Sòti (Max) 70V  
Voltage - Izolasyon 5000Vrms  
Voltage - Forward (Vf) (tip) 1.25V  
Vce Saturation (Max) 300mV  
Vire sou / chanje tan (tip) 7µs, 5µs  
Founisè Aparèy pake 6-DIP  
Seri -  
Leve / tonbe tan (tip) 4.2µs, 4.7µs  
Pake / Ka 6-DIP (0.400', 10.16mm)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Kalite Sòti Transistor  
Operating Tanperati -55°C ~ 100°C  
Nimewo Chanèl 1  
Mounting Kalite Through Hole  
Kalite Antre DC  
Kouran Transfè Pwopòsyon (Min) 100% @ 10mA  
Kouran Transfè Pwopòsyon (Max) 200% @ 10mA  
Kouran - Sòti / Chèn 50mA  
Kouran - DC Forward (Si) (Max) 60 mA  
Nimewo pwodwi baz TCDT1123  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Semiconductor Opto Division TCDT1123G.

Pwodwi atribi TCDT1123G TCDT1120G TCDT1110 TCDT1100G
Nimewo Pati TCDT1123G TCDT1120G TCDT1110 TCDT1100G
Manifakti Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division
Founisè Aparèy pake 6-DIP 6-DIP 6-DIP 6-DIP
Voltage - Sòti (Max) 70V 70V 70V 32V
Nimewo pwodwi baz TCDT1123 TCDT1120 TCDT1110 TCDT1100
Nimewo Chanèl 1 1 1 1
Leve / tonbe tan (tip) 4.2µs, 4.7µs 3µs, 3.7µs 9µs, 18µs 7µs, 6.7µs
Voltage - Forward (Vf) (tip) 1.25V 1.25V 1.2V 1.25V
Kouran - Sòti / Chèn 50mA 50mA 50mA 50mA
Pake / Ka 6-DIP (0.400', 10.16mm) 6-DIP (0.300", 7.62mm) 6-DIP (0.300', 7.62mm) 6-DIP (0.400", 10.16mm)
Kouran Transfè Pwopòsyon (Min) 100% @ 10mA 40% @ 10mA 100% @ 10mA 40% @ 10mA
Kalite Sòti Transistor Transistor Transistor Transistor
Seri - - - -
Vire sou / chanje tan (tip) 7µs, 5µs 5.5µs, 4µs 15µs, 15µs 11µs, 7µs
Kouran Transfè Pwopòsyon (Max) 200% @ 10mA - - -
Kouran - DC Forward (Si) (Max) 60 mA 60 mA 60 mA 60 mA
Pakèt Tube Tube Tube Tube
Kalite Antre DC DC DC DC
Voltage - Izolasyon 5000Vrms 5000Vrms 5300Vrms 5000Vrms
Vce Saturation (Max) 300mV 300mV 300mV 300mV
Operating Tanperati -55°C ~ 100°C -55°C ~ 100°C -55°C ~ 100°C -55°C ~ 110°C
Mounting Kalite Through Hole Through Hole Through Hole Through Hole

TCDT1123G fich PDF

Download TCDT1123G PDF fich ak dokiman Vishay Semiconductor Opto Division pou TCDT1123G - Vishay Semiconductor Opto Division.

Fich
Cylindrical Battery Holders.pdf
Html fich
TCDT1120(G).pdf

Shipment

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Sètifikasyon & Manm

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TCDT1123G Image

TCDT1123G

Vishay Semiconductor Opto Division
32D-TCDT1123G

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