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KayPwodwi yoIzolanOptoisolators - Transistor, Photovoltaic SòtiTCET1106G
Vishay Semiconductor Opto Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TCET1106G - Vishay Semiconductor Opto Division

Manifakti Nimewo Pati
TCET1106G
Manifakti
Vishay Semiconductor - Opto Division
Allelco Nimewo Pati
32D-TCET1106G
ECAD modèl
Pati Deskripsyon
OPTOISOLATOR 5KV TRANS 4DIP
Deskripsyon detaye
Pake
4-DIP (0.400", 10.16mm)
Done fèy
TCET1100(G) - TCET1109(G).pdf
TCET1100(G) - TCET1109(G).pdf
RoHs Status
Nan stok: 252570

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Kantite

Espesifikasyon

Espesifikasyon TCET1106G Tech
Vishay Semiconductor Opto Division - TCET1106G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Semiconductor Opto Division - TCET1106G

Pwodwi atribi Valè atribi  
Manifakti Vishay Semiconductor - Opto Division  
Voltage - Sòti (Max) 70V  
Voltage - Izolasyon 5000Vrms  
Voltage - Forward (Vf) (tip) 1.25V  
Vce Saturation (Max) 300mV  
Vire sou / chanje tan (tip) 6µs, 5µs  
Founisè Aparèy pake 4-DIP  
Seri -  
Leve / tonbe tan (tip) 3µs, 4.7µs  
Pake / Ka 4-DIP (0.400", 10.16mm)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Kalite Sòti Transistor  
Operating Tanperati -40°C ~ 100°C  
Nimewo Chanèl 1  
Mounting Kalite Through Hole  
Kalite Antre DC  
Kouran Transfè Pwopòsyon (Min) 100% @ 5mA  
Kouran Transfè Pwopòsyon (Max) 300% @ 5mA  
Kouran - Sòti / Chèn 50mA  
Kouran - DC Forward (Si) (Max) 60 mA  
Nimewo pwodwi baz TCET1106  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Semiconductor Opto Division TCET1106G.

Pwodwi atribi TCET1106G TCET1108 TCET1110 TCET1103G
Nimewo Pati TCET1106G TCET1108 TCET1110 TCET1103G
Manifakti Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division
Pake / Ka 4-DIP (0.400", 10.16mm) 4-DIP (0.300', 7.62mm) 4-DIP (0.300", 7.62mm) 4-DIP (0.400', 10.16mm)
Nimewo Chanèl 1 1 1 1
Voltage - Izolasyon 5000Vrms 5000Vrms 5000Vrms 5000Vrms
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Founisè Aparèy pake 4-DIP 4-DIP 4-DIP 4-DIP
Vire sou / chanje tan (tip) 6µs, 5µs 6µs, 5µs 6µs, 5µs 6µs, 5µs
Kalite Sòti Transistor Transistor Transistor Transistor
Kouran - DC Forward (Si) (Max) 60 mA 60 mA 60 mA 60 mA
Leve / tonbe tan (tip) 3µs, 4.7µs 3µs, 4.7µs 3µs, 4.7µs 3µs, 4.7µs
Vce Saturation (Max) 300mV 300mV 300mV 300mV
Voltage - Sòti (Max) 70V 70V 70V 70V
Kouran Transfè Pwopòsyon (Min) 100% @ 5mA 130% @ 5mA 50% @ 5mA 100% @ 10mA
Kalite Antre DC DC DC DC
Voltage - Forward (Vf) (tip) 1.25V 1.25V 1.25V 1.25V
Seri - - - -
Operating Tanperati -40°C ~ 100°C -40°C ~ 100°C -40°C ~ 110°C -40°C ~ 100°C
Pakèt Tube Tube Tube Tube
Kouran - Sòti / Chèn 50mA 50mA 50mA 50mA
Nimewo pwodwi baz TCET1106 TCET1108 TCET11 TCET1103
Kouran Transfè Pwopòsyon (Max) 300% @ 5mA 260% @ 5mA 600% @ 5mA 200% @ 10mA

TCET1106G fich PDF

Download TCET1106G PDF fich ak dokiman Vishay Semiconductor Opto Division pou TCET1106G - Vishay Semiconductor Opto Division.

Fich
TCET1100(G) - TCET1109(G).pdf
Html fich
TCET1100(G) - TCET1109(G).pdf

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Sètifikasyon & Manm

Wè plis
Vishay Semiconductor Opto Division

TCET1106G

Vishay Semiconductor Opto Division
32D-TCET1106G

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