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KayPwodwi yoIzolanOptoisolators - Transistor, Photovoltaic SòtiTCMT1105
TCMT1105 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TCMT1105 - Vishay Semiconductor Opto Division

Manifakti Nimewo Pati
TCMT1105
Manifakti
Vishay Semiconductor - Opto Division
Allelco Nimewo Pati
32D-TCMT1105
ECAD modèl
Pati Deskripsyon
OPTOISOLATOR 3.75KV TRANS 4-SOP
Deskripsyon detaye
Pake
4-SOIC (0.173", 4.40mm Width)
Done fèy
TCMT1100 - TCMT1109.pdf
TCMT1100 - TCMT1109.pdf
RoHs Status
Nan stok: 167570

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Kantite

Espesifikasyon

Espesifikasyon TCMT1105 Tech
Vishay Semiconductor Opto Division - TCMT1105 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Semiconductor Opto Division - TCMT1105

Pwodwi atribi Valè atribi  
Manifakti Vishay Semiconductor - Opto Division  
Voltage - Sòti (Max) 70V  
Voltage - Izolasyon 3750Vrms  
Voltage - Forward (Vf) (tip) 1.35V  
Vce Saturation (Max) 300mV  
Vire sou / chanje tan (tip) 9.5µs, 8.5µs  
Founisè Aparèy pake 4-SOP  
Seri -  
Leve / tonbe tan (tip) 5.5µs, 7µs  
Pake / Ka 4-SOIC (0.173", 4.40mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Kalite Sòti Transistor  
Operating Tanperati -40°C ~ 100°C  
Nimewo Chanèl 1  
Mounting Kalite Surface Mount  
Kalite Antre DC  
Kouran Transfè Pwopòsyon (Min) 50% @ 5mA  
Kouran Transfè Pwopòsyon (Max) 150% @ 5mA  
Kouran - Sòti / Chèn 50mA  
Kouran - DC Forward (Si) (Max) 60 mA  
Nimewo pwodwi baz TCMT1105  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Semiconductor Opto Division TCMT1105.

Pwodwi atribi TCMT1105 TCMT1100 TCMT1111 TCMT1114
Nimewo Pati TCMT1105 TCMT1100 TCMT1111 TCMT1114
Manifakti Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vce Saturation (Max) 300mV 300mV 300mV 300mV
Seri - - - -
Voltage - Forward (Vf) (tip) 1.35V 1.35V 1.15V 1.15V
Kouran Transfè Pwopòsyon (Min) 50% @ 5mA 50% @ 5mA 40% @ 10mA 160% @ 10mA
Pake / Ka 4-SOIC (0.173", 4.40mm Width) 4-SOIC (0.173', 4.40mm Width) 4-SOIC (0.173', 4.40mm Width) 4-SOIC (0.173', 4.40mm Width)
Kouran Transfè Pwopòsyon (Max) 150% @ 5mA 600% @ 5mA 80% @ 10mA 320% @ 10mA
Founisè Aparèy pake 4-SOP 4-SOP 4-SOP 4-SOP
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kouran - Sòti / Chèn 50mA 50mA 50mA 50mA
Kalite Sòti Transistor Transistor Transistor Transistor
Kouran - DC Forward (Si) (Max) 60 mA 60 mA 50 mA 50 mA
Leve / tonbe tan (tip) 5.5µs, 7µs 5.5µs, 7µs 3µs, 4µs 3µs, 4µs
Nimewo Chanèl 1 1 1 1
Voltage - Sòti (Max) 70V 70V 70V 70V
Nimewo pwodwi baz TCMT1105 TCMT1100 TCMT1111 TCMT1114
Operating Tanperati -40°C ~ 100°C -40°C ~ 100°C -40°C ~ 110°C -40°C ~ 110°C
Vire sou / chanje tan (tip) 9.5µs, 8.5µs 9.5µs, 8.5µs 5µs, 3µs 5µs, 3µs
Kalite Antre DC DC DC DC
Voltage - Izolasyon 3750Vrms 3750Vrms 3750Vrms 3750Vrms

TCMT1105 fich PDF

Download TCMT1105 PDF fich ak dokiman Vishay Semiconductor Opto Division pou TCMT1105 - Vishay Semiconductor Opto Division.

PCN konsepsyon/spesifikasyon
OMV-795-2014-Rev-0 03/Mar/2014.pdf
Fich
TCMT1100 - TCMT1109.pdf
Html fich
TCMT1100 - TCMT1109.pdf

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Sètifikasyon & Manm

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TCMT1105 Image

TCMT1105

Vishay Semiconductor Opto Division
32D-TCMT1105

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