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KayPwodwi yoIzolanOptoisolators - Transistor, Photovoltaic SòtiVOS617A-9T
VOS617A-9T Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

VOS617A-9T - Vishay Semiconductor Opto Division

Manifakti Nimewo Pati
VOS617A-9T
Manifakti
Vishay Semiconductor - Opto Division
Allelco Nimewo Pati
32D-VOS617A-9T
ECAD modèl
Pati Deskripsyon
OPTOISOLATOR 3.75KV TRANS 4SSOP
Deskripsyon detaye
Pake
4-SOIC (0.173", 4.40mm Width)
Done fèy
VOS617A.pdf
VOS617A.pdf
RoHs Status
Nan stok: 224170

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Espesifikasyon

Espesifikasyon VOS617A-9T Tech
Vishay Semiconductor Opto Division - VOS617A-9T espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Semiconductor Opto Division - VOS617A-9T

Pwodwi atribi Valè atribi  
Manifakti Vishay Semiconductor - Opto Division  
Voltage - Sòti (Max) 80V  
Voltage - Izolasyon 3750Vrms  
Voltage - Forward (Vf) (tip) 1.18V  
Vce Saturation (Max) 400mV  
Vire sou / chanje tan (tip) 6µs, 4µs  
Founisè Aparèy pake 4-SSOP  
Seri -  
Leve / tonbe tan (tip) 3µs, 3µs  
Pake / Ka 4-SOIC (0.173", 4.40mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Kalite Sòti Transistor  
Operating Tanperati -55°C ~ 110°C  
Nimewo Chanèl 1  
Mounting Kalite Surface Mount  
Kalite Antre DC  
Kouran Transfè Pwopòsyon (Min) 200% @ 5mA  
Kouran Transfè Pwopòsyon (Max) 400% @ 5mA  
Kouran - Sòti / Chèn 50mA  
Kouran - DC Forward (Si) (Max) 50 mA  
Nimewo pwodwi baz VOS617  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Semiconductor Opto Division VOS617A-9T.

Pwodwi atribi VOS617A-9T VOS617A-X001T VOS617AT VOS617A-7X001T
Nimewo Pati VOS617A-9T VOS617A-X001T VOS617AT VOS617A-7X001T
Manifakti Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division
Leve / tonbe tan (tip) 3µs, 3µs 3µs, 3µs 3µs, 3µs 3µs, 3µs
Voltage - Forward (Vf) (tip) 1.18V 1.18V 1.18V 1.18V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kalite Antre DC DC DC DC
Pake / Ka 4-SOIC (0.173", 4.40mm Width) 4-SOIC (0.173', 4.40mm Width) 4-SOIC (0.173", 4.40mm Width) 4-SOIC (0.173', 4.40mm Width)
Kalite Sòti Transistor Transistor Transistor Transistor
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vire sou / chanje tan (tip) 6µs, 4µs 6µs, 4µs 6µs, 4µs 6µs, 4µs
Voltage - Izolasyon 3750Vrms 3750Vrms 3750Vrms 3750Vrms
Nimewo pwodwi baz VOS617 VOS617 VOS617 VOS617
Vce Saturation (Max) 400mV 400mV 400mV 400mV
Kouran Transfè Pwopòsyon (Max) 400% @ 5mA 600% @ 5mA 600% @ 5mA 160% @ 5mA
Founisè Aparèy pake 4-SSOP 4-SSOP 4-SSOP 4-SSOP
Operating Tanperati -55°C ~ 110°C -55°C ~ 110°C -55°C ~ 110°C -55°C ~ 110°C
Kouran - DC Forward (Si) (Max) 50 mA 50 mA 50 mA 50 mA
Seri - - - -
Nimewo Chanèl 1 1 1 1
Kouran - Sòti / Chèn 50mA 50mA 50mA 50mA
Kouran Transfè Pwopòsyon (Min) 200% @ 5mA 50% @ 5mA 50% @ 5mA 80% @ 5mA
Voltage - Sòti (Max) 80V 80V 80V 80V

VOS617A-9T fich PDF

Download VOS617A-9T PDF fich ak dokiman Vishay Semiconductor Opto Division pou VOS617A-9T - Vishay Semiconductor Opto Division.

Fich
VOS617A.pdf
Html fich
VOS617A.pdf

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VOS617A-9T Image

VOS617A-9T

Vishay Semiconductor Opto Division
32D-VOS617A-9T

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