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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF9520
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF9520 - Vishay Siliconix

Manifakti Nimewo Pati
IRF9520
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-IRF9520
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 100V 6.8A TO220AB
Deskripsyon detaye
Pake
TO-220-3
Done fèy
IRF9520, SiHF9520.pdf
Nan stok: 4260

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IRF9520 Tech
Vishay Siliconix - IRF9520 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - IRF9520

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220AB  
Seri -  
Rds Sou (Max) @ Id, Vgs 600mOhm @ 4.1A, 10V  
Dissipasyon pouvwa (Max) 60W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 390 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 6.8A (Tc)  
Nimewo pwodwi baz IRF9520  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix IRF9520.

Pwodwi atribi IRF9520 IRF9510STRL IRF9510SPBF IRF9520
Nimewo Pati IRF9520 IRF9510STRL IRF9510SPBF IRF9520
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Harris Corporation
Nimewo pwodwi baz IRF9520 IRF9510 IRF9510 -
Fèt tip P-Channel P-Channel P-Channel P-Channel
Pake / Ka TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3
Kapasite Antre (Ciss) (Max) @ Vds 390 pF @ 25 V 200 pF @ 25 V 200 pF @ 25 V 300 pF @ 25 V
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 8.7 nC @ 10 V 8.7 nC @ 10 V 22 nC @ 10 V
Founisè Aparèy pake TO-220AB D²PAK (TO-263) - TO-220AB
Vgs (Max) ±20V ±20V ±20V ±20V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V -
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss) 100 V 100 V 100 V 100 V
FET Feature - - - -
Pakèt Tube Tape & Reel (TR) Tube Bulk
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Rds Sou (Max) @ Id, Vgs 600mOhm @ 4.1A, 10V 1.2Ohm @ 2.4A, 10V 1.2Ohm @ 2.4A, 10V 600mOhm @ 3.5A, 10V
Mounting Kalite Through Hole Surface Mount Surface Mount Through Hole
Kouran - Kontini Drain (Id) @ 25 ° C 6.8A (Tc) 4A (Tc) 4A (Tc) 6A (Tc)
Seri - - - -
Dissipasyon pouvwa (Max) 60W (Tc) 3.7W (Ta), 43W (Tc) 43W (Tc) 40W (Tc)

IRF9520 fich PDF

Download IRF9520 PDF fich ak dokiman Vishay Siliconix pou IRF9520 - Vishay Siliconix.

PCN obsolescence/ eol
SIL-018-2015-Rev-0 20/May/2015.pdf
Lòt dokiman ki gen rapò
Packaging Information.pdf
Fich
IRF9520, SiHF9520.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
Vishay Siliconix

IRF9520

Vishay Siliconix
32D-IRF9520

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