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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFB13N50APBF
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFB13N50APBF - Vishay Siliconix

Manifakti Nimewo Pati
IRFB13N50APBF
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-IRFB13N50APBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 500V 14A TO220AB
Deskripsyon detaye
Pake
TO-220-3
Done fèy
IRFB13N50A.pdf
RoHs Status
Nan stok: 25785

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IRFB13N50APBF Tech
Vishay Siliconix - IRFB13N50APBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - IRFB13N50APBF

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220AB  
Seri -  
Rds Sou (Max) @ Id, Vgs 450mOhm @ 8.4A, 10V  
Dissipasyon pouvwa (Max) 250W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 1910 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 81 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 500 V  
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Tc)  
Nimewo pwodwi baz IRFB13  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix IRFB13N50APBF.

Pwodwi atribi IRFB13N50APBF IRFB11N50A IRFB17N50L IRFB17N20D
Nimewo Pati IRFB13N50APBF IRFB11N50A IRFB17N50L IRFB17N20D
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies
Dissipasyon pouvwa (Max) 250W (Tc) 170W (Tc) 220W (Tc) 3.8W (Ta), 140W (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Pòtay Charge (Qg) (Max) @ Vgs 81 nC @ 10 V 52 nC @ 10 V 130 nC @ 10 V 50 nC @ 10 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Kapasite Antre (Ciss) (Max) @ Vds 1910 pF @ 25 V 1423 pF @ 25 V 2760 pF @ 25 V 1100 pF @ 25 V
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Tc) 11A (Tc) 16A (Tc) 16A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Founisè Aparèy pake TO-220AB TO-220AB TO-220AB TO-220AB
Nimewo pwodwi baz IRFB13 IRFB11 IRFB17 -
Drenaj Sous Voltage (Vdss) 500 V 500 V 500 V 200 V
Pake / Ka TO-220-3 TO-220-3 TO-220-3 TO-220-3
Vgs (Max) ±30V ±30V ±30V ±30V
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA 5.5V @ 250µA
Pakèt Tube Tube Tube Tube
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 450mOhm @ 8.4A, 10V 520mOhm @ 6.6A, 10V 320mOhm @ 9.9A, 10V 170mOhm @ 9.8A, 10V
Seri - - - HEXFET®

IRFB13N50APBF fich PDF

Download IRFB13N50APBF PDF fich ak dokiman Vishay Siliconix pou IRFB13N50APBF - Vishay Siliconix.

Lòt dokiman ki gen rapò
Packaging Information.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Material Chg 30/Aug/2019.pdf
Fich
IRFB13N50A.pdf

Shipment

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Sètifikasyon & Manm

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Vishay Siliconix

IRFB13N50APBF

Vishay Siliconix
32D-IRFB13N50APBF

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