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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFBC20PBF
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFBC20PBF - Vishay Siliconix

Manifakti Nimewo Pati
IRFBC20PBF
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-IRFBC20PBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 2.2A TO220AB
Deskripsyon detaye
Pake
TO-220-3
Done fèy
IRFBC20PBF.pdf
RoHs Status
Nan stok: 80170

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRFBC20PBF Tech
Vishay Siliconix - IRFBC20PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - IRFBC20PBF

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220AB  
Seri -  
Rds Sou (Max) @ Id, Vgs 4.4Ohm @ 1.3A, 10V  
Dissipasyon pouvwa (Max) 50W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 350 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 2.2A (Tc)  
Nimewo pwodwi baz IRFBC20  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix IRFBC20PBF.

Pwodwi atribi IRFBC20PBF IRFBA1404PPBF IRFBC30 IRFBC30ALPBF
Nimewo Pati IRFBC20PBF IRFBA1404PPBF IRFBC30 IRFBC30ALPBF
Manifakti Vishay Siliconix International Rectifier Vishay Siliconix Vishay Siliconix
Pake / Ka TO-220-3 TO-273AA TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA
Rds Sou (Max) @ Id, Vgs 4.4Ohm @ 1.3A, 10V 3.7mOhm @ 95A, 10V 2.2Ohm @ 2.2A, 10V 2.2Ohm @ 2.2A, 10V
Pakèt Tube Bulk Tube Tube
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4.5V @ 250µA
Nimewo pwodwi baz IRFBC20 - IRFBC30 IRFBC30
Kapasite Antre (Ciss) (Max) @ Vds 350 pF @ 25 V 7360 pF @ 25 V 660 pF @ 25 V 510 pF @ 25 V
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 200 nC @ 10 V 31 nC @ 10 V 23 nC @ 10 V
Dissipasyon pouvwa (Max) 50W (Tc) 300W (Tc) 74W (Tc) 74W (Tc)
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 2.2A (Tc) 206A (Tc) 3.6A (Tc) 3.6A (Tc)
Operating Tanperati -55°C ~ 150°C (TJ) -40°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Vgs (Max) ±20V ±20V ±20V ±30V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Drenaj Sous Voltage (Vdss) 600 V 40 V 600 V 600 V
Seri - HEXFET® - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Founisè Aparèy pake TO-220AB SUPER-220™ (TO-273AA) TO-220AB I2PAK
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V

IRFBC20PBF fich PDF

Download IRFBC20PBF PDF fich ak dokiman Vishay Siliconix pou IRFBC20PBF - Vishay Siliconix.

Lòt dokiman ki gen rapò
Packaging Information.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Material Chg 30/Aug/2019.pdf

Shipment

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    +00852 9146 4856

Sètifikasyon & Manm

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Vishay Siliconix

IRFBC20PBF

Vishay Siliconix
32D-IRFBC20PBF

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