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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFI740GPBF
IRFI740GPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

IRFI740GPBF - Vishay Siliconix

Manifakti Nimewo Pati
IRFI740GPBF
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-IRFI740GPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 400V 5.4A TO220-3
Pake
TO-220-3 Full Pack, Isolated Tab
Done fèy
IRFI740G.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 24337

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon IRFI740GPBF Tech
Vishay Siliconix - IRFI740GPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - IRFI740GPBF

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220-3  
Seri -  
Rds Sou (Max) @ Id, Vgs 550mOhm @ 3.2A, 10V  
Dissipasyon pouvwa (Max) 40W (Tc)  
Pake / Ka TO-220-3 Full Pack, Isolated Tab  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 1370 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 66 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 400 V  
Kouran - Kontini Drain (Id) @ 25 ° C 5.4A (Tc)  
Nimewo pwodwi baz IRFI740  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix IRFI740GPBF.

Pwodwi atribi IRFI740GPBF IRFI820GPBF IRFI720GPBF IRFI744G
Nimewo Pati IRFI740GPBF IRFI820GPBF IRFI720GPBF IRFI744G
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Pòtay Charge (Qg) (Max) @ Vgs 66 nC @ 10 V 24 nC @ 10 V 20 nC @ 10 V 80 nC @ 10 V
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Pakèt Tube Tube Tube Tube
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 5.4A (Tc) 2.1A (Tc) 2.6A (Tc) 4.9A (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Drenaj Sous Voltage (Vdss) 400 V 500 V 400 V 450 V
Vgs (Max) ±20V ±20V ±20V ±20V
Rds Sou (Max) @ Id, Vgs 550mOhm @ 3.2A, 10V 3Ohm @ 1.3A, 10V 1.8Ohm @ 1.6A, 10V 630mOhm @ 2.9A, 10V
Pake / Ka TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kapasite Antre (Ciss) (Max) @ Vds 1370 pF @ 25 V 360 pF @ 25 V 410 pF @ 25 V 1400 pF @ 25 V
Dissipasyon pouvwa (Max) 40W (Tc) 30W (Tc) 30W (Tc) 40W (Tc)
Nimewo pwodwi baz IRFI740 IRFI820 IRFI720 IRFI744
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Seri - - - -
Founisè Aparèy pake TO-220-3 TO-220-3 TO-220-3 TO-220-3

IRFI740GPBF fich PDF

Download IRFI740GPBF PDF fich ak dokiman Vishay Siliconix pou IRFI740GPBF - Vishay Siliconix.

PCN konsepsyon/spesifikasyon
Advisory 20/Mar/2019.pdf
Asanble PCN/orijin
Mult Devices 18/Jul/2017.pdf
Fich
IRFI740G.pdf

Shipment

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Sètifikasyon & Manm

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IRFI740GPBF Image

IRFI740GPBF

Vishay Siliconix
32D-IRFI740GPBF

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