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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFI9Z24GPBF
IRFI9Z24GPBF Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFI9Z24GPBF - Vishay Siliconix

Manifakti Nimewo Pati
IRFI9Z24GPBF
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-IRFI9Z24GPBF
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 60V 8.5A TO220-3
Deskripsyon detaye
Pake
TO-220-3 Full Pack, Isolated Tab
Done fèy
IRFI9Z24G.pdf
RoHs Status
Nan stok: 24330

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Espesifikasyon

Espesifikasyon IRFI9Z24GPBF Tech
Vishay Siliconix - IRFI9Z24GPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - IRFI9Z24GPBF

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220-3  
Seri -  
Rds Sou (Max) @ Id, Vgs 280mOhm @ 5.1A, 10V  
Dissipasyon pouvwa (Max) 37W (Tc)  
Pake / Ka TO-220-3 Full Pack, Isolated Tab  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 570 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 19 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 8.5A (Tc)  
Nimewo pwodwi baz IRFI9  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix IRFI9Z24GPBF.

Pwodwi atribi IRFI9Z24GPBF IRFI9630GPBF IRFI9Z24G IRFI9Z34N
Nimewo Pati IRFI9Z24GPBF IRFI9630GPBF IRFI9Z24G IRFI9Z34N
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies
Vgs (Max) ±20V ±20V ±20V ±20V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -
Rds Sou (Max) @ Id, Vgs 280mOhm @ 5.1A, 10V 800mOhm @ 2.6A, 10V 280mOhm @ 5.1A, 10V 100mOhm @ 7.8A, 10V
Fèt tip P-Channel P-Channel P-Channel P-Channel
Dissipasyon pouvwa (Max) 37W (Tc) 35W (Tc) 37W (Tc) 37W (Tc)
Founisè Aparèy pake TO-220-3 TO-220-3 TO-220-3 TO-220AB Full-Pak
Drenaj Sous Voltage (Vdss) 60 V 200 V 60 V 55 V
Pakèt Tube Tube Tube Tube
Pòtay Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 29 nC @ 10 V 19 nC @ 10 V 35 nC @ 10 V
Kouran - Kontini Drain (Id) @ 25 ° C 8.5A (Tc) 4.3A (Tc) 8.5A (Tc) 14A (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 570 pF @ 25 V 700 pF @ 25 V 570 pF @ 25 V 620 pF @ 25 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Nimewo pwodwi baz IRFI9 IRFI9630 IRFI9 -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Seri - - - HEXFET®
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Pake / Ka TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack
FET Feature - - - -

IRFI9Z24GPBF fich PDF

Download IRFI9Z24GPBF PDF fich ak dokiman Vishay Siliconix pou IRFI9Z24GPBF - Vishay Siliconix.

PCN konsepsyon/spesifikasyon
Advisory 20/Mar/2019.pdf
Asanble PCN/orijin
Mult Devices 18/Jul/2017.pdf
Fich
IRFI9Z24G.pdf

Shipment

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Sètifikasyon & Manm

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IRFI9Z24GPBF Image

IRFI9Z24GPBF

Vishay Siliconix
32D-IRFI9Z24GPBF

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