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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFR014TRLPBF
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFR014TRLPBF - Vishay Siliconix

Manifakti Nimewo Pati
IRFR014TRLPBF
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-IRFR014TRLPBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 7.7A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
IRFR014, IRFU014, SiHFR014, SiHFU014.pdf
RoHs Status
Nan stok: 54990

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRFR014TRLPBF Tech
Vishay Siliconix - IRFR014TRLPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - IRFR014TRLPBF

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D-Pak  
Seri -  
Rds Sou (Max) @ Id, Vgs 200mOhm @ 4.6A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta), 25W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 300 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 11 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 7.7A (Tc)  
Nimewo pwodwi baz IRFR014  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix IRFR014TRLPBF.

Pwodwi atribi IRFR014TRLPBF IRFR020TR IRFR020 IRFR014
Nimewo Pati IRFR014TRLPBF IRFR020TR IRFR020 IRFR014
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Drenaj Sous Voltage (Vdss) 60 V 60 V 60 V 60 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri - - - -
Pòtay Charge (Qg) (Max) @ Vgs 11 nC @ 10 V 25 nC @ 10 V 25 nC @ 10 V 11 nC @ 10 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Rds Sou (Max) @ Id, Vgs 200mOhm @ 4.6A, 10V 100mOhm @ 8.4A, 10V 100mOhm @ 8.4A, 10V 200mOhm @ 4.6A, 10V
Founisè Aparèy pake D-Pak D-Pak D-Pak D-Pak
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
FET Feature - - - -
Dissipasyon pouvwa (Max) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 42W (Tc) 2.5W (Ta), 42W (Tc) 2.5W (Ta), 25W (Tc)
Vgs (Max) ±20V ±20V ±20V ±20V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kapasite Antre (Ciss) (Max) @ Vds 300 pF @ 25 V 640 pF @ 25 V 640 pF @ 25 V 300 pF @ 25 V
Nimewo pwodwi baz IRFR014 IRFR020 IRFR020 IRFR014
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Kouran - Kontini Drain (Id) @ 25 ° C 7.7A (Tc) 14A (Tc) 14A (Tc) 7.7A (Tc)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tube Tube

IRFR014TRLPBF fich PDF

Download IRFR014TRLPBF PDF fich ak dokiman Vishay Siliconix pou IRFR014TRLPBF - Vishay Siliconix.

PCN konsepsyon/spesifikasyon
Reel Design Change 29/Dec/2022.pdf
Asanble PCN/orijin
SIL-069-2014-Rev-0 23/May/2014.pdf
Fich
IRFR014, IRFU014, SiHFR014, SiHFU014.pdf

Shipment

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Sètifikasyon & Manm

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Vishay Siliconix

IRFR014TRLPBF

Vishay Siliconix
32D-IRFR014TRLPBF

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