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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRFU024
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRFU024 - Vishay Siliconix

Manifakti Nimewo Pati
IRFU024
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-IRFU024
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 14A TO251AA
Deskripsyon detaye
Pake
TO-251-3 Short Leads, IPak, TO-251AA
Done fèy
IRFR024, IRFU024, SiHFR024, SiHFU024.pdf
Nan stok: 4740

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

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Espesifikasyon

Espesifikasyon IRFU024 Tech
Vishay Siliconix - IRFU024 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - IRFU024

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-251AA  
Seri -  
Rds Sou (Max) @ Id, Vgs 100mOhm @ 8.4A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta), 42W (Tc)  
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 640 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Tc)  
Nimewo pwodwi baz IRFU  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix IRFU024.

Pwodwi atribi IRFU024 IRFU1018EPBF IRFU014PBF IRFU024NPBF
Nimewo Pati IRFU024 IRFU1018EPBF IRFU014PBF IRFU024NPBF
Manifakti Vishay Siliconix International Rectifier Vishay Siliconix Infineon Technologies
Kapasite Antre (Ciss) (Max) @ Vds 640 pF @ 25 V 2290 pF @ 50 V 300 pF @ 25 V 370 pF @ 25 V
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Tc) 56A (Tc) 7.7A (Tc) 17A (Tc)
Nimewo pwodwi baz IRFU - IRFU014 IRFU024
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA
Dissipasyon pouvwa (Max) 2.5W (Ta), 42W (Tc) 110W (Tc) 2.5W (Ta), 25W (Tc) 45W (Tc)
FET Feature - - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 100mOhm @ 8.4A, 10V 8.4mOhm @ 47A, 10V 200mOhm @ 4.6A, 10V 75mOhm @ 10A, 10V
Pakèt Tube Bulk Tube Tube
Seri - HEXFET® - HEXFET®
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Founisè Aparèy pake TO-251AA IPAK (TO-251AA) TO-251AA IPAK (TO-251AA)
Drenaj Sous Voltage (Vdss) 60 V 60 V 60 V 55 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V - 10V 10V
Pòtay Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 69 nC @ 10 V 11 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V

IRFU024 fich PDF

Download IRFU024 PDF fich ak dokiman Vishay Siliconix pou IRFU024 - Vishay Siliconix.

Fich
IRFR024, IRFU024, SiHFR024, SiHFU024.pdf

Shipment

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Sètifikasyon & Manm

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Vishay Siliconix

IRFU024

Vishay Siliconix
32D-IRFU024

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