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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRLI540G
IRLI540G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRLI540G - Vishay Siliconix

Manifakti Nimewo Pati
IRLI540G
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-IRLI540G
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 17A TO220-3
Deskripsyon detaye
Pake
TO-220-3 Full Pack, Isolated Tab
Done fèy
IRLI540G, SiHLI540G.pdf
Nan stok: 4910

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Espesifikasyon

Espesifikasyon IRLI540G Tech
Vishay Siliconix - IRLI540G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - IRLI540G

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2V @ 250µA  
Vgs (Max) ±10V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220-3  
Seri -  
Rds Sou (Max) @ Id, Vgs 77mOhm @ 10A, 5V  
Dissipasyon pouvwa (Max) 48W (Tc)  
Pake / Ka TO-220-3 Full Pack, Isolated Tab  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 2200 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 64 nC @ 5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 5V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 17A (Tc)  
Nimewo pwodwi baz IRLI540  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix IRLI540G.

Pwodwi atribi IRLI540G IRLI520N IRLI530G IRLI540N
Nimewo Pati IRLI540G IRLI520N IRLI530G IRLI540N
Manifakti Vishay Siliconix Infineon Technologies Vishay Siliconix Infineon Technologies
Rds Sou (Max) @ Id, Vgs 77mOhm @ 10A, 5V 180mOhm @ 6A, 10V 160mOhm @ 5.8A, 5V 44mOhm @ 12A, 10V
Vgs (Max) ±10V ±16V ±10V ±16V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 5V 4V, 10V 4V, 5V 4V, 10V
Vgs (th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA
Pakèt Tube Tube Tube Tube
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 48W (Tc) 30W (Tc) 42W (Tc) 54W (Tc)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kapasite Antre (Ciss) (Max) @ Vds 2200 pF @ 25 V 440 pF @ 25 V 930 pF @ 25 V 1800 pF @ 25 V
Pòtay Charge (Qg) (Max) @ Vgs 64 nC @ 5 V 20 nC @ 5 V 28 nC @ 5 V 74 nC @ 5 V
Seri - HEXFET® - HEXFET®
Drenaj Sous Voltage (Vdss) 100 V 100 V 100 V 100 V
Kouran - Kontini Drain (Id) @ 25 ° C 17A (Tc) 8.1A (Tc) 9.7A (Tc) 23A (Tc)
Pake / Ka TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Nimewo pwodwi baz IRLI540 - IRLI530 -
Founisè Aparèy pake TO-220-3 PG-TO220-FP TO-220-3 PG-TO220-FP
FET Feature - - - -

IRLI540G fich PDF

Download IRLI540G PDF fich ak dokiman Vishay Siliconix pou IRLI540G - Vishay Siliconix.

Fich
IRLI540G, SiHLI540G.pdf

Shipment

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Sètifikasyon & Manm

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IRLI540G Image

IRLI540G

Vishay Siliconix
32D-IRLI540G

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