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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRLU024
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRLU024 - Vishay Siliconix

Manifakti Nimewo Pati
IRLU024
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-IRLU024
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 14A TO251AA
Deskripsyon detaye
Pake
TO-251-3 Short Leads, IPak, TO-251AA
Done fèy
IRLR024, IRLU024, SiHLR024, SiHLU024.pdf
Nan stok: 3790

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IRLU024 Tech
Vishay Siliconix - IRLU024 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - IRLU024

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2V @ 250µA  
Vgs (Max) ±10V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-251AA  
Seri -  
Rds Sou (Max) @ Id, Vgs 100mOhm @ 8.4A, 5V  
Dissipasyon pouvwa (Max) 2.5W (Ta), 42W (Tc)  
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 870 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 5V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Tc)  
Nimewo pwodwi baz IRLU024  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix IRLU024.

Pwodwi atribi IRLU024 IRLU014PBF IRLTS6342TRPBF IRLU014
Nimewo Pati IRLU024 IRLU014PBF IRLTS6342TRPBF IRLU014
Manifakti Vishay Siliconix Vishay Siliconix Infineon Technologies Vishay Siliconix
Dissipasyon pouvwa (Max) 2.5W (Ta), 42W (Tc) 2.5W (Ta), 25W (Tc) 2W (Ta) 2.5W (Ta), 25W (Tc)
Seri - - HEXFET® -
Founisè Aparèy pake TO-251AA TO-251AA 6-TSOP TO-251AA
Drenaj Sous Voltage (Vdss) 60 V 60 V 30 V 60 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 5V 4V, 5V 2.5V, 4.5V 4V, 5V
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 5 V 8.4 nC @ 5 V 11 nC @ 4.5 V 8.4 nC @ 5 V
Mounting Kalite Through Hole Through Hole Surface Mount Through Hole
Nimewo pwodwi baz IRLU024 IRLU014 IRLTS6342 IRLU014
Rds Sou (Max) @ Id, Vgs 100mOhm @ 8.4A, 5V 200mOhm @ 4.6A, 5V 17.5mOhm @ 8.3A, 4.5V 200mOhm @ 4.6A, 5V
Vgs (Max) ±10V ±10V ±12V ±10V
FET Feature - - - -
Vgs (th) (Max) @ Id 2V @ 250µA 2V @ 250µA 1.1V @ 10µA 2V @ 250µA
Kapasite Antre (Ciss) (Max) @ Vds 870 pF @ 25 V 400 pF @ 25 V 1010 pF @ 25 V 400 pF @ 25 V
Pakèt Tube Tube Tape & Reel (TR) Tube
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 14A (Tc) 7.7A (Tc) 8.3A (Ta) 7.7A (Tc)
Pake / Ka TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA SOT-23-6 TO-251-3 Short Leads, IPak, TO-251AA
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)

IRLU024 fich PDF

Download IRLU024 PDF fich ak dokiman Vishay Siliconix pou IRLU024 - Vishay Siliconix.

Fich
IRLR024, IRLU024, SiHLR024, SiHLU024.pdf

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Vishay Siliconix

IRLU024

Vishay Siliconix
32D-IRLU024

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