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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRLZ14PBF
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRLZ14PBF - Vishay Siliconix

Manifakti Nimewo Pati
IRLZ14PBF
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-IRLZ14PBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 10A TO220AB
Deskripsyon detaye
Pake
TO-220-3
Done fèy
IRLZ14PBF.pdf
RoHs Status
Nan stok: 77770

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRLZ14PBF Tech
Vishay Siliconix - IRLZ14PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - IRLZ14PBF

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2V @ 250µA  
Vgs (Max) ±10V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220AB  
Seri -  
Rds Sou (Max) @ Id, Vgs 200mOhm @ 6A, 5V  
Dissipasyon pouvwa (Max) 43W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 400 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 8.4 nC @ 5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 5V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 10A (Tc)  
Nimewo pwodwi baz IRLZ14  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix IRLZ14PBF.

Pwodwi atribi IRLZ14PBF IRLZ14STRLPBF IRLZ14 IRLZ14L
Nimewo Pati IRLZ14PBF IRLZ14STRLPBF IRLZ14 IRLZ14L
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA
Nimewo pwodwi baz IRLZ14 IRLZ14 IRLZ14 IRLZ14
Vgs (Max) ±10V ±10V ±10V ±10V
Mounting Kalite Through Hole Surface Mount Through Hole Through Hole
Founisè Aparèy pake TO-220AB D²PAK (TO-263) TO-220AB TO-262-3
Pòtay Charge (Qg) (Max) @ Vgs 8.4 nC @ 5 V 8.4 nC @ 5 V 8.4 nC @ 5 V 8.4 nC @ 5 V
Pakèt Tube Tape & Reel (TR) Tube Tube
Dissipasyon pouvwa (Max) 43W (Tc) 3.7W (Ta), 43W (Tc) 43W (Tc) 3.7W (Ta), 43W (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 400 pF @ 25 V 400 pF @ 25 V 400 pF @ 25 V 400 pF @ 25 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA
Rds Sou (Max) @ Id, Vgs 200mOhm @ 6A, 5V 200mOhm @ 6A, 5V 200mOhm @ 6A, 5V 200mOhm @ 6A, 5V
Drenaj Sous Voltage (Vdss) 60 V 60 V 60 V 60 V
Kouran - Kontini Drain (Id) @ 25 ° C 10A (Tc) 10A (Tc) 10A (Tc) 10A (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 5V 4V, 5V 4V, 5V 4V, 5V
Seri - - - -
FET Feature - - - -

IRLZ14PBF fich PDF

Download IRLZ14PBF PDF fich ak dokiman Vishay Siliconix pou IRLZ14PBF - Vishay Siliconix.

Lòt dokiman ki gen rapò
Packaging Information.pdf
PCN konsepsyon/spesifikasyon
Mult Dev Material Chg 30/Aug/2019.pdf

Shipment

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    +00852 9146 4856

Sètifikasyon & Manm

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Vishay Siliconix

IRLZ14PBF

Vishay Siliconix
32D-IRLZ14PBF

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