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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRLZ24STRR
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

IRLZ24STRR - Vishay Siliconix

Manifakti Nimewo Pati
IRLZ24STRR
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-IRLZ24STRR
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 17A D2PAK
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
IRLZ24S(L),SiHLZ24S(L) ~.pdf
Sètifikasyon nou an
Nan stok: 3650

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Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon IRLZ24STRR Tech
Vishay Siliconix - IRLZ24STRR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - IRLZ24STRR

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2V @ 250µA  
Vgs (Max) ±10V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake D²PAK (TO-263)  
Seri -  
Rds Sou (Max) @ Id, Vgs 100mOhm @ 10A, 5V  
Dissipasyon pouvwa (Max) 3.7W (Ta), 60W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 870 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 5V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 17A (Tc)  
Nimewo pwodwi baz IRLZ24  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status RoHS ki pa konfòme
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix IRLZ24STRR.

Pwodwi atribi IRLZ24STRR IRLZ34L IRLZ34NS IRLZ34
Nimewo Pati IRLZ24STRR IRLZ34L IRLZ34NS IRLZ34
Manifakti Vishay Siliconix Vishay Siliconix Infineon Technologies Vishay Siliconix
Rds Sou (Max) @ Id, Vgs 100mOhm @ 10A, 5V 50mOhm @ 18A, 5V 35mOhm @ 16A, 10V 50mOhm @ 18A, 5V
Vgs (Max) ±10V ±10V ±16V ±10V
Vgs (th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA
Dissipasyon pouvwa (Max) 3.7W (Ta), 60W (Tc) 3.7W (Ta), 88W (Tc) 3.8W (Ta), 68W (Tc) 88W (Tc)
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Nimewo pwodwi baz IRLZ24 IRLZ34 - IRLZ34
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 5V 4V, 5V 4V, 10V 4V, 5V
Drenaj Sous Voltage (Vdss) 60 V 60 V 55 V 60 V
Pakèt Tape & Reel (TR) Tube Tube Tube
Seri - - HEXFET® -
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 17A (Tc) 30A (Tc) 30A (Tc) 30A (Tc)
FET Feature - - - -
Mounting Kalite Surface Mount Through Hole Surface Mount Through Hole
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 5 V 35 nC @ 5 V 25 nC @ 5 V 35 nC @ 5 V
Kapasite Antre (Ciss) (Max) @ Vds 870 pF @ 25 V 1600 pF @ 25 V 880 pF @ 25 V 1600 pF @ 25 V
Founisè Aparèy pake D²PAK (TO-263) TO-262-3 D2PAK TO-220AB

IRLZ24STRR fich PDF

Download IRLZ24STRR PDF fich ak dokiman Vishay Siliconix pou IRLZ24STRR - Vishay Siliconix.

Fich
IRLZ24S(L),SiHLZ24S(L) ~.pdf

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Sètifikasyon & Manm

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Vishay Siliconix

IRLZ24STRR

Vishay Siliconix
32D-IRLZ24STRR

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