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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI1305DL-T1-GE3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI1305DL-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SI1305DL-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI1305DL-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 8V 0.86A SC-70-3
Deskripsyon detaye
Pake
SC-70, SOT-323
Done fèy
SI1305DL.pdf
RoHs Status
Nan stok: 4860

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SI1305DL-T1-GE3 Tech
Vishay Siliconix - SI1305DL-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI1305DL-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 450mV @ 250µA (Min)  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SC-70-3  
Seri -  
Rds Sou (Max) @ Id, Vgs 280mOhm @ 1A, 4.5V  
Dissipasyon pouvwa (Max) 290mW (Ta)  
Pake / Ka SC-70, SOT-323  
Pakèt Cut Tape (CT)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Pòtay Charge (Qg) (Max) @ Vgs 4 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature -  
Drenaj Sous Voltage (Vdss) 8 V  
Kouran - Kontini Drain (Id) @ 25 ° C 860mA (Ta)  
Nimewo pwodwi baz SI1305  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI1305DL-T1-GE3.

Pwodwi atribi SI1305DL-T1-GE3 SI1305EDL-T1-E3 SI1305DL-T1-E3 SI1304BDL-T1-E3
Nimewo Pati SI1305DL-T1-GE3 SI1305EDL-T1-E3 SI1305DL-T1-E3 SI1304BDL-T1-E3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pakèt Cut Tape (CT) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Founisè Aparèy pake SC-70-3 SC-70-3 SC-70-3 SC-70-3
Pòtay Charge (Qg) (Max) @ Vgs 4 nC @ 4.5 V 4 nC @ 4.5 V 4 nC @ 4.5 V 2.7 nC @ 4.5 V
Seri - - TrenchFET® TrenchFET®
Rds Sou (Max) @ Id, Vgs 280mOhm @ 1A, 4.5V 280mOhm @ 1A, 4.5V 280mOhm @ 1A, 4.5V 270mOhm @ 900mA, 4.5V
Fèt tip P-Channel P-Channel P-Channel N-Channel
Dissipasyon pouvwa (Max) 290mW (Ta) 290mW (Ta) 290mW (Ta) 340mW (Ta), 370mW (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Nimewo pwodwi baz SI1305 SI1305 SI1305 SI1304
Drenaj Sous Voltage (Vdss) 8 V 8 V 8 V 30 V
Vgs (th) (Max) @ Id 450mV @ 250µA (Min) 450mV @ 250µA (Min) 450mV @ 250µA (Min) 1.3V @ 250µA
Kouran - Kontini Drain (Id) @ 25 ° C 860mA (Ta) 860mA (Ta) 860mA (Ta) 900mA (Tc)
Pake / Ka SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323

SI1305DL-T1-GE3 fich PDF

Download SI1305DL-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SI1305DL-T1-GE3 - Vishay Siliconix.

Enfòmasyon sou anviwònman an
Material Compliance.pdf
PCN obsolescence/ eol
SIL-0632014 16/Apr/2014.pdf
Fich
SI1305DL.pdf

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SI1305DL-T1-GE3

Vishay Siliconix
32D-SI1305DL-T1-GE3

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