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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI1411DH-T1-GE3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI1411DH-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SI1411DH-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI1411DH-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 150V 420MA SOT363
Deskripsyon detaye
Pake
6-TSSOP, SC-88, SOT-363
Done fèy
Si1411DH.pdf
RoHs Status
Nan stok: 95910

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SI1411DH-T1-GE3 Tech
Vishay Siliconix - SI1411DH-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI1411DH-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4.5V @ 100µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SC-70-6  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 2.6Ohm @ 500mA, 10V  
Dissipasyon pouvwa (Max) 1W (Ta)  
Pake / Ka 6-TSSOP, SC-88, SOT-363  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Pòtay Charge (Qg) (Max) @ Vgs 6.3 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 150 V  
Kouran - Kontini Drain (Id) @ 25 ° C 420mA (Ta)  
Nimewo pwodwi baz SI1411  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI1411DH-T1-GE3.

Pwodwi atribi SI1411DH-T1-GE3 SI1406DH-T1-GE3 SI1413EDH-T1-E3 SI1406DH-T1-E3
Nimewo Pati SI1411DH-T1-GE3 SI1406DH-T1-GE3 SI1413EDH-T1-E3 SI1406DH-T1-E3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 1.8V, 4.5V 1.8V, 4.5V 1.8V, 4.5V
Nimewo pwodwi baz SI1411 SI1406 SI1413 SI1406
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vgs (Max) ±20V ±8V ±12V ±8V
Vgs (th) (Max) @ Id 4.5V @ 100µA 1.2V @ 250µA 450mV @ 100µA (Min) 1.2V @ 250µA
Fèt tip P-Channel N-Channel P-Channel N-Channel
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Kouran - Kontini Drain (Id) @ 25 ° C 420mA (Ta) 3.1A (Ta) 2.3A (Ta) 3.1A (Ta)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pòtay Charge (Qg) (Max) @ Vgs 6.3 nC @ 10 V 7.5 nC @ 4.5 V 8 nC @ 4.5 V 7.5 nC @ 4.5 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 2.6Ohm @ 500mA, 10V 65mOhm @ 3.9A, 4.5V 115mOhm @ 2.9A, 4.5V 65mOhm @ 3.9A, 4.5V
Drenaj Sous Voltage (Vdss) 150 V 20 V 20 V 20 V
Founisè Aparèy pake SC-70-6 SC-70-6 SC-70-6 SC-70-6
Dissipasyon pouvwa (Max) 1W (Ta) 1W (Ta) 1W (Ta) 1W (Ta)

SI1411DH-T1-GE3 fich PDF

Download SI1411DH-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SI1411DH-T1-GE3 - Vishay Siliconix.

Enfòmasyon sou anviwònman an
Material Compliance.pdf
Fich
Si1411DH.pdf

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Sètifikasyon & Manm

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Vishay Siliconix

SI1411DH-T1-GE3

Vishay Siliconix
32D-SI1411DH-T1-GE3

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