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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySI1539CDL-T1-GE3
SI1539CDL-T1-GE3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

SI1539CDL-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SI1539CDL-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI1539CDL-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET N/P-CH 30V SOT363
Pake
6-TSSOP, SC-88, SOT-363
Done fèy
SI1539CDL.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 335480

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SI1539CDL-T1-GE3 Tech
Vishay Siliconix - SI1539CDL-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI1539CDL-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SC-70-6  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 388mOhm @ 600mA, 10V  
Pouvwa - Max 340mW  
Pake / Ka 6-TSSOP, SC-88, SOT-363  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 28pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 1.5nC @ 10V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 700mA, 500mA  
Konfigirasyon N and P-Channel  
Nimewo pwodwi baz SI1539  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI1539CDL-T1-GE3.

Pwodwi atribi SI1539CDL-T1-GE3 SI1551DL-T1-E3 SI1539DL-T1-E3 SI1553CDL-T1-GE3
Nimewo Pati SI1539CDL-T1-GE3 SI1551DL-T1-E3 SI1539DL-T1-E3 SI1553CDL-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Pouvwa - Max 340mW 270mW 270mW 340mW
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Drenaj Sous Voltage (Vdss) 30V 20V 30V 20V
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Konfigirasyon N and P-Channel N and P-Channel N and P-Channel N and P-Channel
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Kapasite Antre (Ciss) (Max) @ Vds 28pF @ 15V - - 38pF @ 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Nimewo pwodwi baz SI1539 SI1551 SI1539 SI1553
Rds Sou (Max) @ Id, Vgs 388mOhm @ 600mA, 10V 1.9Ohm @ 290mA, 4.5V 480mOhm @ 590mA, 10V 390mOhm @ 700mA, 4.5V
Founisè Aparèy pake SC-70-6 SC-70-6 SC-70-6 SC-70-6
Pake / Ka 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Kouran - Kontini Drain (Id) @ 25 ° C 700mA, 500mA 290mA, 410mA 540mA, 420mA 700mA, 500mA
Vgs (th) (Max) @ Id 2.5V @ 250µA 1.5V @ 250µA 2.6V @ 250µA 1.5V @ 250µA
Pòtay Charge (Qg) (Max) @ Vgs 1.5nC @ 10V 1.5nC @ 4.5V 1.4nC @ 10V 1.8nC @ 10V

SI1539CDL-T1-GE3 fich PDF

Download SI1539CDL-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SI1539CDL-T1-GE3 - Vishay Siliconix.

Enfòmasyon sou anviwònman an
Material Compliance.pdf
Fich
SI1539CDL.pdf

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SI1539CDL-T1-GE3 Image

SI1539CDL-T1-GE3

Vishay Siliconix
32D-SI1539CDL-T1-GE3

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