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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySI1972DH-T1-GE3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI1972DH-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SI1972DH-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI1972DH-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 30V 1.3A SC-70-6
Deskripsyon detaye
Pake
6-TSSOP, SC-88, SOT-363
Done fèy
SI1972DH.pdf
RoHs Status
Nan stok: 4260

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SI1972DH-T1-GE3 Tech
Vishay Siliconix - SI1972DH-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI1972DH-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2.8V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SC-70-6  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 225mOhm @ 1.3A, 10V  
Pouvwa - Max 1.25W  
Pake / Ka 6-TSSOP, SC-88, SOT-363  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 75pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 2.8nC @ 10V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 1.3A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz SI1972  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI1972DH-T1-GE3.

Pwodwi atribi SI1972DH-T1-GE3 SI1967DH-T1-GE3 SI1922EDH-T1-GE3 SI1967DH-T1-BE3
Nimewo Pati SI1972DH-T1-GE3 SI1967DH-T1-GE3 SI1922EDH-T1-GE3 SI1967DH-T1-BE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Rds Sou (Max) @ Id, Vgs 225mOhm @ 1.3A, 10V 490mOhm @ 910mA, 4.5V 198mOhm @ 1A, 4.5V 490mOhm @ 910mA, 4.5V
Founisè Aparèy pake SC-70-6 SC-70-6 SC-70-6 SC-70-6
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss) 30V 20V 20V 20V
Pake / Ka 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Pòtay Charge (Qg) (Max) @ Vgs 2.8nC @ 10V 4nC @ 8V 2.5nC @ 8V 4nC @ 10V
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vgs (th) (Max) @ Id 2.8V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA
FET Feature - Logic Level Gate Logic Level Gate -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kouran - Kontini Drain (Id) @ 25 ° C 1.3A 1.3A 1.3A 1A (Ta), 1.3A (Tc)
Nimewo pwodwi baz SI1972 SI1967 SI1922 SI1967
Kapasite Antre (Ciss) (Max) @ Vds 75pF @ 15V 110pF @ 10V - 110pF @ 10V
Konfigirasyon 2 N-Channel (Dual) 2 P-Channel (Dual) 2 N-Channel (Dual) 2 P-Channel (Dual)
Pouvwa - Max 1.25W 1.25W 1.25W 740mW (Ta), 1.25W (Tc)

SI1972DH-T1-GE3 fich PDF

Download SI1972DH-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SI1972DH-T1-GE3 - Vishay Siliconix.

Enfòmasyon sou anviwònman an
Material Compliance.pdf
Fich
SI1972DH.pdf
PCN obsolescence/ eol
PCN- SIL-0582013 05/Dec/2013.pdf

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Vishay Siliconix

SI1972DH-T1-GE3

Vishay Siliconix
32D-SI1972DH-T1-GE3

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