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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI2302ADS-T1-GE3
SI2302ADS-T1-GE3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI2302ADS-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SI2302ADS-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI2302ADS-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 20V 2.1A SOT23-3
Deskripsyon detaye
Pake
TO-236-3, SC-59, SOT-23-3
Done fèy
SI2302ADS.pdf
RoHs Status
Nan stok: 4670

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Kantite

Espesifikasyon

Espesifikasyon SI2302ADS-T1-GE3 Tech
Vishay Siliconix - SI2302ADS-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI2302ADS-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 1.2V @ 50µA  
Vgs (Max) ±8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SOT-23-3 (TO-236)  
Seri -  
Rds Sou (Max) @ Id, Vgs 60mOhm @ 3.6A, 4.5V  
Dissipasyon pouvwa (Max) 700mW (Ta)  
Pake / Ka TO-236-3, SC-59, SOT-23-3  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 300 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 2.1A (Ta)  
Nimewo pwodwi baz SI2302  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI2302ADS-T1-GE3.

Pwodwi atribi SI2302ADS-T1-GE3 SI2302ADS-T1-E3 SI2302A SI2302ADS-T1
Nimewo Pati SI2302ADS-T1-GE3 SI2302ADS-T1-E3 SI2302A SI2302ADS-T1
Manifakti Vishay Siliconix Vishay Siliconix UMW Vishay Siliconix
Vgs (th) (Max) @ Id 1.2V @ 50µA 1.2V @ 50µA 1.9V @ 250µA 1.2V @ 50µA
Founisè Aparèy pake SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23 SOT-23-3 (TO-236)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Rds Sou (Max) @ Id, Vgs 60mOhm @ 3.6A, 4.5V 60mOhm @ 3.6A, 4.5V 45mOhm @ 3.6A, 4.5V 60mOhm @ 3.6A, 4.5V
Dissipasyon pouvwa (Max) 700mW (Ta) 700mW (Ta) 1.25W (Ta) 700mW (Ta)
Seri - - UMW -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Pòtay Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V 10 nC @ 4.5 V 10 nC @ 4.5 V 10 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V ±8V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Nimewo pwodwi baz SI2302 SI2302 - SI2302
Drenaj Sous Voltage (Vdss) 20 V 20 V 20 V 20 V
Kapasite Antre (Ciss) (Max) @ Vds 300 pF @ 10 V 300 pF @ 10 V 300 pF @ 10 V 300 pF @ 10 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 2.1A (Ta) 2.1A (Ta) 3.6A (Ta) 2.1A (Ta)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)

SI2302ADS-T1-GE3 fich PDF

Download SI2302ADS-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SI2302ADS-T1-GE3 - Vishay Siliconix.

Enfòmasyon sou anviwònman an
Material Compliance.pdf
Fich
SI2302ADS.pdf

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SI2302ADS-T1-GE3 Image

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Vishay Siliconix
32D-SI2302ADS-T1-GE3

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