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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI2337DS-T1-GE3
SI2337DS-T1-GE3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI2337DS-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SI2337DS-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI2337DS-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 80V 2.2A SOT23-3
Deskripsyon detaye
Pake
TO-236-3, SC-59, SOT-23-3
Done fèy
SI2337DS.pdf
RoHs Status
Nan stok: 72540

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SI2337DS-T1-GE3 Tech
Vishay Siliconix - SI2337DS-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI2337DS-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SOT-23-3 (TO-236)  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 270mOhm @ 1.2A, 10V  
Dissipasyon pouvwa (Max) 760mW (Ta), 2.5W (Tc)  
Pake / Ka TO-236-3, SC-59, SOT-23-3  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -50°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 500 pF @ 40 V  
Pòtay Charge (Qg) (Max) @ Vgs 17 nC @ 10 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V  
Drenaj Sous Voltage (Vdss) 80 V  
Kouran - Kontini Drain (Id) @ 25 ° C 2.2A (Tc)  
Nimewo pwodwi baz SI2337  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI2337DS-T1-GE3.

Pwodwi atribi SI2337DS-T1-GE3 SI2335DS-T1-GE3 SI2336DS-T1-GE3 SI2341DS-T1-E3
Nimewo Pati SI2337DS-T1-GE3 SI2335DS-T1-GE3 SI2336DS-T1-GE3 SI2341DS-T1-E3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Vgs (Max) ±20V ±8V ±8V ±20V
Fèt tip P-Channel P-Channel N-Channel P-Channel
Dissipasyon pouvwa (Max) 760mW (Ta), 2.5W (Tc) 750mW (Ta) 1.25W (Ta), 1.8W (Tc) 710mW (Ta)
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 2.2A (Tc) 3.2A (Ta) 5.2A (Tc) 2.5A (Ta)
Drenaj Sous Voltage (Vdss) 80 V 12 V 30 V 30 V
Vgs (th) (Max) @ Id 4V @ 250µA 450mV @ 250µA (Min) 1V @ 250µA 3V @ 250µA
Nimewo pwodwi baz SI2337 SI2335 SI2336 SI2341
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V
Founisè Aparèy pake SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Operating Tanperati -50°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 15 nC @ 4.5 V 15 nC @ 8 V 15 nC @ 10 V
Pake / Ka TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 270mOhm @ 1.2A, 10V 51mOhm @ 4A, 4.5V 42mOhm @ 3.8A, 4.5V 72mOhm @ 2.8A, 10V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kapasite Antre (Ciss) (Max) @ Vds 500 pF @ 40 V 1225 pF @ 6 V 560 pF @ 15 V 400 pF @ 15 V

SI2337DS-T1-GE3 fich PDF

Download SI2337DS-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SI2337DS-T1-GE3 - Vishay Siliconix.

Asanble PCN/orijin
New Solder Plating Site 18/Apr/2023.pdf
Enfòmasyon sou anviwònman an
Material Compliance.pdf
Fich
SI2337DS.pdf

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SI2337DS-T1-GE3 Image

SI2337DS-T1-GE3

Vishay Siliconix
32D-SI2337DS-T1-GE3

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