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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI3493DV-T1-E3
SI3493DV-T1-E3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI3493DV-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SI3493DV-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI3493DV-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 20V 5.3A 6TSOP
Deskripsyon detaye
Pake
SOT-23-6 Thin, TSOT-23-6
Done fèy
SI3493DV.pdf
RoHs Status
Nan stok: 3930

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon SI3493DV-T1-E3 Tech
Vishay Siliconix - SI3493DV-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI3493DV-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 1V @ 250µA  
Vgs (Max) ±8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 6-TSOP  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 27mOhm @ 7A, 4.5V  
Dissipasyon pouvwa (Max) 1.1W (Ta)  
Pake / Ka SOT-23-6 Thin, TSOT-23-6  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Pòtay Charge (Qg) (Max) @ Vgs 32 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 5.3A (Ta)  
Nimewo pwodwi baz SI3493  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI3493DV-T1-E3.

Pwodwi atribi SI3493DV-T1-E3 SI3499DV-T1-GE3 SI3495DV-T1-E3 SI3493BDV-T1-GE3
Nimewo Pati SI3493DV-T1-E3 SI3499DV-T1-GE3 SI3495DV-T1-E3 SI3493BDV-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V 1.5V, 4.5V 1.5V, 4.5V 1.8V, 4.5V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Drenaj Sous Voltage (Vdss) 20 V 8 V 20 V 20 V
Nimewo pwodwi baz SI3493 SI3499 SI3495 SI3493
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (th) (Max) @ Id 1V @ 250µA 750mV @ 250µA 750mV @ 250µA 900mV @ 250µA
Dissipasyon pouvwa (Max) 1.1W (Ta) 1.1W (Ta) 1.1W (Ta) 2.08W (Ta), 2.97W (Tc)
Founisè Aparèy pake 6-TSOP 6-TSOP 6-TSOP 6-TSOP
Vgs (Max) ±8V ±5V ±5V ±8V
Fèt tip P-Channel P-Channel P-Channel P-Channel
FET Feature - - - -
Pake / Ka SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pòtay Charge (Qg) (Max) @ Vgs 32 nC @ 4.5 V 42 nC @ 4.5 V 38 nC @ 4.5 V 43.5 nC @ 5 V
Rds Sou (Max) @ Id, Vgs 27mOhm @ 7A, 4.5V 23mOhm @ 7A, 4.5V 24mOhm @ 7A, 4.5V 27.5mOhm @ 7A, 4.5V
Kouran - Kontini Drain (Id) @ 25 ° C 5.3A (Ta) 5.3A (Ta) 5.3A (Ta) 8A (Tc)

SI3493DV-T1-E3 fich PDF

Download SI3493DV-T1-E3 PDF fich ak dokiman Vishay Siliconix pou SI3493DV-T1-E3 - Vishay Siliconix.

PCN obsolescence/ eol
SIL-0632014 16/Apr/2014.pdf
Fich
SI3493DV.pdf

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Sètifikasyon & Manm

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SI3493DV-T1-E3 Image

SI3493DV-T1-E3

Vishay Siliconix
32D-SI3493DV-T1-E3

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