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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI4322DY-T1-E3
SI4322DY-T1-E3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

SI4322DY-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SI4322DY-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI4322DY-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 18A 8SO
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
SI4322DY.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 4080

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SI4322DY-T1-E3 Tech
Vishay Siliconix - SI4322DY-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI4322DY-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 3V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 8.5mOhm @ 15A, 10V  
Dissipasyon pouvwa (Max) 3.1W (Ta), 5.4W (Tc)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1640 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 38 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 18A (Tc)  
Nimewo pwodwi baz SI4322  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI4322DY-T1-E3.

Pwodwi atribi SI4322DY-T1-E3 SI4320DY-T1-E3 SI4324DY-T1-E3 SI4330DY-T1-E3.
Nimewo Pati SI4322DY-T1-E3 SI4320DY-T1-E3 SI4324DY-T1-E3 SI4330DY-T1-E3.
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Electro-Films (EFI) / Vishay
Dissipasyon pouvwa (Max) 3.1W (Ta), 5.4W (Tc) 1.6W (Ta) 3.5W (Ta), 7.8W (Tc) -
Vgs (th) (Max) @ Id 3V @ 250µA 3V @ 250µA 2.5V @ 250µA -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) -
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC -
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V -
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 8.5mOhm @ 15A, 10V 3mOhm @ 25A, 10V 3.2mOhm @ 20A, 10V -
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V -
Pòtay Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 70 nC @ 4.5 V 85 nC @ 10 V -
Fèt tip N-Channel N-Channel N-Channel -
Seri TrenchFET® TrenchFET® TrenchFET® -
Mounting Kalite Surface Mount Surface Mount Surface Mount -
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) -
Kouran - Kontini Drain (Id) @ 25 ° C 18A (Tc) 17A (Ta) 36A (Tc) -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Nimewo pwodwi baz SI4322 SI4320 SI4324 -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Vgs (Max) ±20V ±20V ±20V -
Kapasite Antre (Ciss) (Max) @ Vds 1640 pF @ 15 V 6500 pF @ 15 V 3510 pF @ 15 V -

SI4322DY-T1-E3 fich PDF

Download SI4322DY-T1-E3 PDF fich ak dokiman Vishay Siliconix pou SI4322DY-T1-E3 - Vishay Siliconix.

Fich
SI4322DY.pdf

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SI4322DY-T1-E3 Image

SI4322DY-T1-E3

Vishay Siliconix
32D-SI4322DY-T1-E3

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