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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI4427BDY-T1-E3
SI4427BDY-T1-E3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI4427BDY-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SI4427BDY-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI4427BDY-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 30V 9.7A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
SI4427BDY.pdf
RoHs Status
Nan stok: 45460

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon SI4427BDY-T1-E3 Tech
Vishay Siliconix - SI4427BDY-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI4427BDY-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 1.4V @ 250µA  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 10.5mOhm @ 12.6A, 10V  
Dissipasyon pouvwa (Max) 1.5W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Pòtay Charge (Qg) (Max) @ Vgs 70 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 9.7A (Ta)  
Nimewo pwodwi baz SI4427  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI4427BDY-T1-E3.

Pwodwi atribi SI4427BDY-T1-E3 SI4425FDY-T1-GE3 SI4426DY-T1-E3 SI4430-B1-FM
Nimewo Pati SI4427BDY-T1-E3 SI4425FDY-T1-GE3 SI4426DY-T1-E3 SI4430-B1-FM
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Silicon Labs
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Drenaj Sous Voltage (Vdss) 30 V 30 V 20 V -
Dissipasyon pouvwa (Max) 1.5W (Ta) 2.3W (Ta), 4.8W (Tc) 1.5W (Ta) -
Kouran - Kontini Drain (Id) @ 25 ° C 9.7A (Ta) 12.7A (Ta), 18.3A (Tc) 6.5A (Ta) -
Fèt tip P-Channel P-Channel N-Channel -
Pòtay Charge (Qg) (Max) @ Vgs 70 nC @ 4.5 V 41 nC @ 10 V 50 nC @ 4.5 V -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tube
Vgs (Max) ±12V +16V, -20V ±12V -
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 20-VFQFN Exposed Pad
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC 20-QFN (4x4)
FET Feature - - - -
Seri TrenchFET® TrenchFET® Gen IV TrenchFET® -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Vgs (th) (Max) @ Id 1.4V @ 250µA 2.2V @ 250µA 1.4V @ 250µA -
Nimewo pwodwi baz SI4427 SI4425 SI4426 SI4430
Rds Sou (Max) @ Id, Vgs 10.5mOhm @ 12.6A, 10V 9.5mOhm @ 10A, 10V 25mOhm @ 8.5A, 4.5V -
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 10V 4.5V, 10V 2.5V, 4.5V -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 85°C

SI4427BDY-T1-E3 fich PDF

Download SI4427BDY-T1-E3 PDF fich ak dokiman Vishay Siliconix pou SI4427BDY-T1-E3 - Vishay Siliconix.

Asanble PCN/orijin
New Solder Plating Site 18/Apr/2023.pdf
Fich
SI4427BDY.pdf

Shipment

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Sètifikasyon & Manm

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SI4427BDY-T1-E3 Image

SI4427BDY-T1-E3

Vishay Siliconix
32D-SI4427BDY-T1-E3

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