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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySI4505DY-T1-E3
SI4505DY-T1-E3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI4505DY-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SI4505DY-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI4505DY-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET N/P-CH 30V/8V 8-SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
SI4505DY.pdf
RoHs Status
Nan stok: 3970

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Kantite

Espesifikasyon

Espesifikasyon SI4505DY-T1-E3 Tech
Vishay Siliconix - SI4505DY-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI4505DY-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 1.8V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 18mOhm @ 7.8A, 10V  
Pouvwa - Max 1.2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds -  
Pòtay Charge (Qg) (Max) @ Vgs 20nC @ 5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 30V, 8V  
Kouran - Kontini Drain (Id) @ 25 ° C 6A, 3.8A  
Konfigirasyon N and P-Channel  
Nimewo pwodwi baz SI4505  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI4505DY-T1-E3.

Pwodwi atribi SI4505DY-T1-E3 SI4511DY-T1-E3 SI4511DY-T1-GE3 SI4505DY-T1-GE3
Nimewo Pati SI4505DY-T1-E3 SI4511DY-T1-E3 SI4511DY-T1-GE3 SI4505DY-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Operating Tanperati -55°C ~ 150°C (TJ) - - -55°C ~ 150°C (TJ)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Nimewo pwodwi baz SI4505 SI4511 SI4511 SI4505
Seri TrenchFET® - - TrenchFET®
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pouvwa - Max 1.2W 1.1W 1.1W 1.2W
Drenaj Sous Voltage (Vdss) 30V, 8V 20V 20V 30V, 8V
Rds Sou (Max) @ Id, Vgs 18mOhm @ 7.8A, 10V 14.5mOhm @ 9.6A, 10V 14.5mOhm @ 9.6A, 10V 18mOhm @ 7.8A, 10V
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Vgs (th) (Max) @ Id 1.8V @ 250µA 1.8V @ 250µA 1.8V @ 250µA 1.8V @ 250µA
Konfigirasyon N and P-Channel N and P-Channel N and P-Channel N and P-Channel
Pakèt Tape & Reel (TR) Cut Tape (CT) Cut Tape (CT) Tape & Reel (TR)
Kapasite Antre (Ciss) (Max) @ Vds - - - -
Pòtay Charge (Qg) (Max) @ Vgs 20nC @ 5V 18nC @ 4.5V 18nC @ 4.5V 20nC @ 5V
Kouran - Kontini Drain (Id) @ 25 ° C 6A, 3.8A 7.2A, 4.6A 7.2A, 4.6A 6A, 3.8A

SI4505DY-T1-E3 fich PDF

Download SI4505DY-T1-E3 PDF fich ak dokiman Vishay Siliconix pou SI4505DY-T1-E3 - Vishay Siliconix.

Fich
SI4505DY.pdf

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Sètifikasyon & Manm

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SI4505DY-T1-E3 Image

SI4505DY-T1-E3

Vishay Siliconix
32D-SI4505DY-T1-E3

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