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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySI4554DY-T1-GE3
SI4554DY-T1-GE3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI4554DY-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SI4554DY-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI4554DY-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET N/P-CH 40V 8A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
Si4554DY.pdf
RoHs Status
Nan stok: 88600

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Kantite

Espesifikasyon

Espesifikasyon SI4554DY-T1-GE3 Tech
Vishay Siliconix - SI4554DY-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI4554DY-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2.2V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 24mOhm @ 6.8A, 10V  
Pouvwa - Max 3.1W, 3.2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 690pF @ 20V  
Pòtay Charge (Qg) (Max) @ Vgs 20nC @ 10V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 40V  
Kouran - Kontini Drain (Id) @ 25 ° C 8A  
Konfigirasyon N and P-Channel  
Nimewo pwodwi baz SI4554  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI4554DY-T1-GE3.

Pwodwi atribi SI4554DY-T1-GE3 SI4542DY-T1-E3 SI4559ADY-T1-E3 SI4559ADY-T1-GE3
Nimewo Pati SI4554DY-T1-GE3 SI4542DY-T1-E3 SI4559ADY-T1-E3 SI4559ADY-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Drenaj Sous Voltage (Vdss) 40V 30V 60V 60V
Pouvwa - Max 3.1W, 3.2W 2W 3.1W, 3.4W 3.1W, 3.4W
Pòtay Charge (Qg) (Max) @ Vgs 20nC @ 10V 50nC @ 10V 20nC @ 10V 20nC @ 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Vgs (th) (Max) @ Id 2.2V @ 250µA 1V @ 250µA (Min) 3V @ 250µA 3V @ 250µA
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Rds Sou (Max) @ Id, Vgs 24mOhm @ 6.8A, 10V 25mOhm @ 6.9A, 10V 58mOhm @ 4.3A, 10V 58mOhm @ 4.3A, 10V
Konfigirasyon N and P-Channel N and P-Channel N and P-Channel N and P-Channel
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kouran - Kontini Drain (Id) @ 25 ° C 8A - 5.3A, 3.9A 5.3A, 3.9A
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Nimewo pwodwi baz SI4554 SI4542 SI4559 SI4559
Kapasite Antre (Ciss) (Max) @ Vds 690pF @ 20V - 665pF @ 15V 665pF @ 15V
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)

SI4554DY-T1-GE3 fich PDF

Download SI4554DY-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SI4554DY-T1-GE3 - Vishay Siliconix.

Asanble PCN/orijin
New Solder Plating Site 18/Apr/2023.pdf
Fich
Si4554DY.pdf

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Sètifikasyon & Manm

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SI4554DY-T1-GE3 Image

SI4554DY-T1-GE3

Vishay Siliconix
32D-SI4554DY-T1-GE3

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