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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI4626ADY-T1-E3
SI4626ADY-T1-E3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI4626ADY-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SI4626ADY-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI4626ADY-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 30A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
SI4626ADY.pdf
RoHs Status
Nan stok: 30290

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SI4626ADY-T1-E3 Tech
Vishay Siliconix - SI4626ADY-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI4626ADY-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 3.3mOhm @ 15A, 10V  
Dissipasyon pouvwa (Max) 3W (Ta), 6W (Tc)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 5370 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 125 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 30A (Tc)  
Nimewo pwodwi baz SI4626  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI4626ADY-T1-E3.

Pwodwi atribi SI4626ADY-T1-E3 SI4626ADY-T1-GE3 SI4630DY-T1-E3 SI4620DY-T1-E3
Nimewo Pati SI4626ADY-T1-E3 SI4626ADY-T1-GE3 SI4630DY-T1-E3 SI4620DY-T1-E3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Seri TrenchFET® TrenchFET® TrenchFET® LITTLE FOOT®
Rds Sou (Max) @ Id, Vgs 3.3mOhm @ 15A, 10V 3.3mOhm @ 15A, 10V 2.7mOhm @ 20A, 10V 35mOhm @ 6A, 10V
Kapasite Antre (Ciss) (Max) @ Vds 5370 pF @ 15 V 5370 pF @ 15 V 6670 pF @ 15 V 1040 pF @ 15 V
Dissipasyon pouvwa (Max) 3W (Ta), 6W (Tc) 3W (Ta), 6W (Tc) 3.5W (Ta), 7.8W (Tc) 2W (Ta), 3.1W (Tc)
FET Feature - - - Schottky Diode (Isolated)
Nimewo pwodwi baz SI4626 SI4626 SI4630 SI4620
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kouran - Kontini Drain (Id) @ 25 ° C 30A (Tc) 30A (Tc) 40A (Tc) 6A (Ta), 7.5A (Tc)
Drenaj Sous Voltage (Vdss) 30 V 30 V 25 V 30 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Pòtay Charge (Qg) (Max) @ Vgs 125 nC @ 10 V 125 nC @ 10 V 161 nC @ 10 V 13 nC @ 10 V
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs (Max) ±20V ±20V ±16V ±20V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount

SI4626ADY-T1-E3 fich PDF

Download SI4626ADY-T1-E3 PDF fich ak dokiman Vishay Siliconix pou SI4626ADY-T1-E3 - Vishay Siliconix.

PCN konsepsyon/spesifikasyon
Mult Dev 07/Jun/2023.pdf New solder paste 26/May/2023.pdf
Asanble PCN/orijin
New Solder Plating Site 18/Apr/2023.pdf
Fich
SI4626ADY.pdf

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Sètifikasyon & Manm

Wè plis
SI4626ADY-T1-E3 Image

SI4626ADY-T1-E3

Vishay Siliconix
32D-SI4626ADY-T1-E3

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