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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI4896DY-T1-E3
SI4896DY-T1-E3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI4896DY-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SI4896DY-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI4896DY-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 80V 6.7A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
SI4896DY.pdf
RoHs Status
Nan stok: 34070

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Kantite

Espesifikasyon

Espesifikasyon SI4896DY-T1-E3 Tech
Vishay Siliconix - SI4896DY-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI4896DY-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2V @ 250µA (Min)  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 16.5mOhm @ 10A, 10V  
Dissipasyon pouvwa (Max) 1.56W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Pòtay Charge (Qg) (Max) @ Vgs 41 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V  
Drenaj Sous Voltage (Vdss) 80 V  
Kouran - Kontini Drain (Id) @ 25 ° C 6.7A (Ta)  
Nimewo pwodwi baz SI4896  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI4896DY-T1-E3.

Pwodwi atribi SI4896DY-T1-E3 SI4894BDY-T1-GE3 SI4896DY-T1-GE3 SI4901-GL
Nimewo Pati SI4896DY-T1-E3 SI4894BDY-T1-GE3 SI4896DY-T1-GE3 SI4901-GL
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix SILICONLA
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) -
Drenaj Sous Voltage (Vdss) 80 V 30 V 80 V -
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount -
Pòtay Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 38 nC @ 10 V 41 nC @ 10 V -
Dissipasyon pouvwa (Max) 1.56W (Ta) 1.4W (Ta) 1.56W (Ta) -
Kouran - Kontini Drain (Id) @ 25 ° C 6.7A (Ta) 8.9A (Ta) 6.7A (Ta) -
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V 4.5V, 10V 6V, 10V -
Vgs (Max) ±20V ±20V ±20V -
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) -
Fèt tip N-Channel N-Channel N-Channel -
Vgs (th) (Max) @ Id 2V @ 250µA (Min) 3V @ 250µA 2V @ 250µA (Min) -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Seri TrenchFET® TrenchFET® TrenchFET® -
Rds Sou (Max) @ Id, Vgs 16.5mOhm @ 10A, 10V 11mOhm @ 12A, 10V 16.5mOhm @ 10A, 10V -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Nimewo pwodwi baz SI4896 SI4894 SI4896 -
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC -

SI4896DY-T1-E3 fich PDF

Download SI4896DY-T1-E3 PDF fich ak dokiman Vishay Siliconix pou SI4896DY-T1-E3 - Vishay Siliconix.

Asanble PCN/orijin
New Solder Plating Site 18/Apr/2023.pdf
Fich
SI4896DY.pdf

Shipment

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Sètifikasyon & Manm

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SI4896DY-T1-E3 Image

SI4896DY-T1-E3

Vishay Siliconix
32D-SI4896DY-T1-E3

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