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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySI4948BEY-T1-E3
SI4948BEY-T1-E3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

SI4948BEY-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SI4948BEY-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI4948BEY-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET 2P-CH 60V 2.4A 8-SOIC
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
SI4948BEY.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 75450

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Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SI4948BEY-T1-E3 Tech
Vishay Siliconix - SI4948BEY-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI4948BEY-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 3V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 120mOhm @ 3.1A, 10V  
Pouvwa - Max 1.4W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds -  
Pòtay Charge (Qg) (Max) @ Vgs 22nC @ 10V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 60V  
Kouran - Kontini Drain (Id) @ 25 ° C 2.4A  
Konfigirasyon 2 P-Channel (Dual)  
Nimewo pwodwi baz SI4948  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI4948BEY-T1-E3.

Pwodwi atribi SI4948BEY-T1-E3 SI4948BEY-T1-GE3 SI4947DY-TI Si4947DY-T1-GE3
Nimewo Pati SI4948BEY-T1-E3 SI4948BEY-T1-GE3 SI4947DY-TI Si4947DY-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Electro-Films (EFI) / Vishay Electro-Films (EFI) / Vishay
Drenaj Sous Voltage (Vdss) 60V 60V - -
Kouran - Kontini Drain (Id) @ 25 ° C 2.4A 2.4A - -
Nimewo pwodwi baz SI4948 SI4948 - -
Founisè Aparèy pake 8-SOIC 8-SOIC - -
Pòtay Charge (Qg) (Max) @ Vgs 22nC @ 10V 22nC @ 10V - -
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) - -
Kapasite Antre (Ciss) (Max) @ Vds - - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Seri TrenchFET® TrenchFET® - -
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -
Mounting Kalite Surface Mount Surface Mount - -
Konfigirasyon 2 P-Channel (Dual) 2 P-Channel (Dual) - -
Pouvwa - Max 1.4W 1.4W - -
Vgs (th) (Max) @ Id 3V @ 250µA 3V @ 250µA - -
FET Feature Logic Level Gate Logic Level Gate - -
Rds Sou (Max) @ Id, Vgs 120mOhm @ 3.1A, 10V 120mOhm @ 3.1A, 10V - -

SI4948BEY-T1-E3 fich PDF

Download SI4948BEY-T1-E3 PDF fich ak dokiman Vishay Siliconix pou SI4948BEY-T1-E3 - Vishay Siliconix.

Asanble PCN/orijin
New Solder Plating Site 18/Apr/2023.pdf
Fich
SI4948BEY.pdf

Shipment

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Sètifikasyon & Manm

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SI4948BEY-T1-E3 Image

SI4948BEY-T1-E3

Vishay Siliconix
32D-SI4948BEY-T1-E3

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