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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySI4953ADY-T1-GE3
SI4953ADY-T1-GE3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

SI4953ADY-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SI4953ADY-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI4953ADY-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET 2P-CH 30V 3.7A 8-SOIC
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
SI4953ADY.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 3630

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SI4953ADY-T1-GE3 Tech
Vishay Siliconix - SI4953ADY-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI4953ADY-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 1V @ 250µA (Min)  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri -  
Rds Sou (Max) @ Id, Vgs 53mOhm @ 4.9A, 10V  
Pouvwa - Max 1.1W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Cut Tape (CT)  
Pwodwi atribi Valè atribi  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds -  
Pòtay Charge (Qg) (Max) @ Vgs 25nC @ 10V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 3.7A  
Konfigirasyon 2 P-Channel (Dual)  
Nimewo pwodwi baz SI4953  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI4953ADY-T1-GE3.

Pwodwi atribi SI4953ADY-T1-GE3 SI4952DY-T1-E3 SI4953DY SI4952DY-T1-GE3
Nimewo Pati SI4953ADY-T1-GE3 SI4952DY-T1-E3 SI4953DY SI4952DY-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Fairchild Semiconductor Vishay Siliconix
Seri - TrenchFET® - TrenchFET®
Drenaj Sous Voltage (Vdss) 30V 25V 30V 25V
Pakèt Cut Tape (CT) Tape & Reel (TR) Bulk Tape & Reel (TR)
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pòtay Charge (Qg) (Max) @ Vgs 25nC @ 10V 18nC @ 10V 25nC @ 10V 18nC @ 10V
Kapasite Antre (Ciss) (Max) @ Vds - 680pF @ 13V 750pF @ 15V 680pF @ 13V
Pouvwa - Max 1.1W 2.8W 900mW (Ta) 2.8W
Nimewo pwodwi baz SI4953 SI4952 SI4953 SI4952
Konfigirasyon 2 P-Channel (Dual) 2 N-Channel (Dual) 2 P-Channel (Dual) 2 N-Channel (Dual)
Vgs (th) (Max) @ Id 1V @ 250µA (Min) 2.2V @ 250µA 1V @ 250µA 2.2V @ 250µA
Kouran - Kontini Drain (Id) @ 25 ° C 3.7A 8A 4.9A (Ta) 8A
FET Feature Logic Level Gate Logic Level Gate - Logic Level Gate
Rds Sou (Max) @ Id, Vgs 53mOhm @ 4.9A, 10V 23mOhm @ 7A, 10V 53mOhm @ 4.9A, 10V 23mOhm @ 7A, 10V
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

SI4953ADY-T1-GE3 fich PDF

Download SI4953ADY-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SI4953ADY-T1-GE3 - Vishay Siliconix.

PCN obsolescence/ eol
SIL-1072014 Rev0 17/Dec/2014.pdf
Fich
SI4953ADY.pdf

Shipment

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Sètifikasyon & Manm

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SI4953ADY-T1-GE3 Image

SI4953ADY-T1-GE3

Vishay Siliconix
32D-SI4953ADY-T1-GE3

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