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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySI4965DY-T1-E3
SI4965DY-T1-E3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

SI4965DY-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SI4965DY-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI4965DY-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET 2P-CH 8V 8SOIC
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
SI4965DY.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 5360

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SI4965DY-T1-E3 Tech
Vishay Siliconix - SI4965DY-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI4965DY-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 450mV @ 250µA (Min)  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 21mOhm @ 8A, 4.5V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds -  
Pòtay Charge (Qg) (Max) @ Vgs 55nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 8V  
Kouran - Kontini Drain (Id) @ 25 ° C -  
Konfigirasyon 2 P-Channel (Dual)  
Nimewo pwodwi baz SI4965  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI4965DY-T1-E3.

Pwodwi atribi SI4965DY-T1-E3 SI4966DY-T1-E3 SI4963DY SI4967DY-T1-E3
Nimewo Pati SI4965DY-T1-E3 SI4966DY-T1-E3 SI4963DY SI4967DY-T1-E3
Manifakti Vishay Siliconix Vishay Siliconix Fairchild Semiconductor Vishay Siliconix
Pouvwa - Max 2W 2W 900mW (Ta) 2W
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Nimewo pwodwi baz SI4965 SI4966 SI4963 SI4967
Vgs (th) (Max) @ Id 450mV @ 250µA (Min) 1.5V @ 250µA 1.5V @ 250µA 450mV @ 250µA (Min)
Kouran - Kontini Drain (Id) @ 25 ° C - - 6.2A (Ta) -
FET Feature Logic Level Gate Logic Level Gate - Logic Level Gate
Rds Sou (Max) @ Id, Vgs 21mOhm @ 8A, 4.5V 25mOhm @ 7.1A, 4.5V 33mOhm @ 6.2A, 4.5V 23mOhm @ 7.5A, 4.5V
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Pòtay Charge (Qg) (Max) @ Vgs 55nC @ 4.5V 50nC @ 4.5V 20nC @ 4.5V 55nC @ 10V
Seri TrenchFET® TrenchFET® PowerTrench® TrenchFET®
Kapasite Antre (Ciss) (Max) @ Vds - - 1456pF @ 10V -
Konfigirasyon 2 P-Channel (Dual) 2 N-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
Drenaj Sous Voltage (Vdss) 8V 20V 20V 12V
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Bulk Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)

SI4965DY-T1-E3 fich PDF

Download SI4965DY-T1-E3 PDF fich ak dokiman Vishay Siliconix pou SI4965DY-T1-E3 - Vishay Siliconix.

PCN obsolescence/ eol
SIL-0632014 16/Apr/2014.pdf
Fich
SI4965DY.pdf

Shipment

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Sètifikasyon & Manm

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SI4965DY-T1-E3 Image

SI4965DY-T1-E3

Vishay Siliconix
32D-SI4965DY-T1-E3

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