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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySI6913DQ-T1-GE3
SI6913DQ-T1-GE3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

SI6913DQ-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SI6913DQ-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI6913DQ-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET 2P-CH 12V 4.9A 8-TSSOP
Pake
8-TSSOP (0.173", 4.40mm Width)
Done fèy
SI6913DQ.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 55710

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SI6913DQ-T1-GE3 Tech
Vishay Siliconix - SI6913DQ-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI6913DQ-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 900mV @ 400µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-TSSOP  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 21mOhm @ 5.8A, 4.5V  
Pouvwa - Max 830mW  
Pake / Ka 8-TSSOP (0.173", 4.40mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds -  
Pòtay Charge (Qg) (Max) @ Vgs 28nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 12V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.9A  
Konfigirasyon 2 P-Channel (Dual)  
Nimewo pwodwi baz SI6913  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI6913DQ-T1-GE3.

Pwodwi atribi SI6913DQ-T1-GE3 SI6924AEDQ-T1-E3 SI6913DQ-T1-E3 SI6925ADQ-T1-GE3
Nimewo Pati SI6913DQ-T1-GE3 SI6924AEDQ-T1-E3 SI6913DQ-T1-E3 SI6925ADQ-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Rds Sou (Max) @ Id, Vgs 21mOhm @ 5.8A, 4.5V 33mOhm @ 4.6A, 4.5V 21mOhm @ 5.8A, 4.5V 45mOhm @ 3.9A, 4.5V
Seri TrenchFET® - TrenchFET® -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pake / Ka 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)
Vgs (th) (Max) @ Id 900mV @ 400µA 1.5V @ 250µA 900mV @ 400µA 1.8V @ 250µA
Konfigirasyon 2 P-Channel (Dual) 2 N-Channel (Dual) Common Drain 2 P-Channel (Dual) 2 N-Channel (Dual)
Kapasite Antre (Ciss) (Max) @ Vds - - - -
Nimewo pwodwi baz SI6913 SI6924 SI6913 SI6925
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Pouvwa - Max 830mW 1W 830mW 800mW
Kouran - Kontini Drain (Id) @ 25 ° C 4.9A 4.1A 4.9A 3.3A
Founisè Aparèy pake 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP
Drenaj Sous Voltage (Vdss) 12V 28V 12V 20V
Pòtay Charge (Qg) (Max) @ Vgs 28nC @ 4.5V 10nC @ 4.5V 28nC @ 4.5V 6nC @ 4.5V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

SI6913DQ-T1-GE3 fich PDF

Download SI6913DQ-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SI6913DQ-T1-GE3 - Vishay Siliconix.

Enfòmasyon sou anviwònman an
Material Compliance.pdf
PCN konsepsyon/spesifikasyon
Epoxy Materials 07/Jan/2022.pdf
Fich
SI6913DQ.pdf

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SI6913DQ-T1-GE3 Image

SI6913DQ-T1-GE3

Vishay Siliconix
32D-SI6913DQ-T1-GE3

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