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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySI6966DQ-T1-GE3
SI6966DQ-T1-GE3 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI6966DQ-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SI6966DQ-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI6966DQ-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 20V 4A 8TSSOP
Deskripsyon detaye
Pake
8-TSSOP (0.173", 4.40mm Width)
Done fèy
SI6966DQ-T1-GE3.pdf
RoHs Status
Nan stok: 4330

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Kantite

Espesifikasyon

Espesifikasyon SI6966DQ-T1-GE3 Tech
Vishay Siliconix - SI6966DQ-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI6966DQ-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 1.4V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-TSSOP  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 30mOhm @ 4.5A, 4.5V  
Pouvwa - Max 830mW  
Pake / Ka 8-TSSOP (0.173", 4.40mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds -  
Pòtay Charge (Qg) (Max) @ Vgs 20nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 20V  
Kouran - Kontini Drain (Id) @ 25 ° C 4A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz SI6966  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI6966DQ-T1-GE3.

Pwodwi atribi SI6966DQ-T1-GE3 SI6963DQ SI6963BDQ-T1-E3 SI6967DQ-T1-E3
Nimewo Pati SI6966DQ-T1-GE3 SI6963DQ SI6963BDQ-T1-E3 SI6967DQ-T1-E3
Manifakti Vishay Siliconix Fairchild Semiconductor Vishay Siliconix Vishay Siliconix
Founisè Aparèy pake 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kapasite Antre (Ciss) (Max) @ Vds - 1015pF @ 10V - -
Drenaj Sous Voltage (Vdss) 20V 20V 20V 8V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature Logic Level Gate - Logic Level Gate Logic Level Gate
Nimewo pwodwi baz SI6966 SI6963 SI6963 SI6967
Pouvwa - Max 830mW 600mW (Ta) 830mW 1.1W
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) Tape & Reel (TR)
Rds Sou (Max) @ Id, Vgs 30mOhm @ 4.5A, 4.5V 43mOhm @ 3.8A, 4.5V 45mOhm @ 3.9A, 4.5V 30mOhm @ 5A, 4.5V
Kouran - Kontini Drain (Id) @ 25 ° C 4A 3.8A (Ta) 3.4A -
Pake / Ka 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)
Pòtay Charge (Qg) (Max) @ Vgs 20nC @ 4.5V 16nC @ 4.5V 11nC @ 4.5V 40nC @ 4.5V
Vgs (th) (Max) @ Id 1.4V @ 250µA 1.5V @ 250µA 1.4V @ 250µA 450mV @ 250µA (Min)
Seri TrenchFET® PowerTrench® - TrenchFET®
Konfigirasyon 2 N-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)

SI6966DQ-T1-GE3 fich PDF

Download SI6966DQ-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SI6966DQ-T1-GE3 - Vishay Siliconix.

Enfòmasyon sou anviwònman an
Material Compliance.pdf

Shipment

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Sètifikasyon & Manm

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SI6966DQ-T1-GE3 Image

SI6966DQ-T1-GE3

Vishay Siliconix
32D-SI6966DQ-T1-GE3

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