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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI7102DN-T1-E3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI7102DN-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SI7102DN-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI7102DN-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 12V 35A PPAK 1212-8
Deskripsyon detaye
Pake
PowerPAK® 1212-8
Done fèy
SI7102DN.pdf
RoHs Status
Nan stok: 5260

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SI7102DN-T1-E3 Tech
Vishay Siliconix - SI7102DN-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI7102DN-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 1V @ 250µA  
Vgs (Max) ±8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerPAK® 1212-8  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 3.8mOhm @ 15A, 4.5V  
Dissipasyon pouvwa (Max) 3.8W (Ta), 52W (Tc)  
Pake / Ka PowerPAK® 1212-8  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -50°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3720 pF @ 6 V  
Pòtay Charge (Qg) (Max) @ Vgs 110 nC @ 8 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 12 V  
Kouran - Kontini Drain (Id) @ 25 ° C 35A (Tc)  
Nimewo pwodwi baz SI7102  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI7102DN-T1-E3.

Pwodwi atribi SI7102DN-T1-E3 SI7106DN-T1-GE3 SI7106DN-T1-E3 SI7100DN-T1-GE3
Nimewo Pati SI7102DN-T1-E3 SI7106DN-T1-GE3 SI7106DN-T1-E3 SI7100DN-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Founisè Aparèy pake PowerPAK® 1212-8 PowerPAK® 1212-8 PowerPAK® 1212-8 PowerPAK® 1212-8
Nimewo pwodwi baz SI7102 SI7106 SI7106 SI7100
Pake / Ka PowerPAK® 1212-8 PowerPAK® 1212-8 PowerPAK® 1212-8 PowerPAK® 1212-8
Fèt tip N-Channel N-Channel N-Channel N-Channel
Drenaj Sous Voltage (Vdss) 12 V 20 V 20 V 8 V
Pòtay Charge (Qg) (Max) @ Vgs 110 nC @ 8 V 27 nC @ 4.5 V 27 nC @ 4.5 V 105 nC @ 8 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Dissipasyon pouvwa (Max) 3.8W (Ta), 52W (Tc) 1.5W (Ta) 1.5W (Ta) 3.8W (Ta), 52W (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 3720 pF @ 6 V - - 3810 pF @ 4 V
FET Feature - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (Max) ±8V ±12V ±12V ±8V
Vgs (th) (Max) @ Id 1V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1V @ 250µA
Rds Sou (Max) @ Id, Vgs 3.8mOhm @ 15A, 4.5V 6.2mOhm @ 19.5A, 4.5V 6.2mOhm @ 19.5A, 4.5V 3.5mOhm @ 15A, 4.5V
Operating Tanperati -50°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -50°C ~ 150°C (TJ)
Kouran - Kontini Drain (Id) @ 25 ° C 35A (Tc) 12.5A (Ta) 12.5A (Ta) 35A (Tc)
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

SI7102DN-T1-E3 fich PDF

Download SI7102DN-T1-E3 PDF fich ak dokiman Vishay Siliconix pou SI7102DN-T1-E3 - Vishay Siliconix.

Asanble PCN/orijin
Multiple Fabracation Changes09/Jul/2014.pdf
PCN obsolescence/ eol
Mult Mosfet EOL 30/Aug/2018.pdf
Fich
SI7102DN.pdf

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Sètifikasyon & Manm

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Vishay Siliconix

SI7102DN-T1-E3

Vishay Siliconix
32D-SI7102DN-T1-E3

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