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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI7148DP-T1-GE3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI7148DP-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SI7148DP-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI7148DP-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 75V 28A PPAK SO-8
Deskripsyon detaye
Pake
PowerPAK® SO-8
Done fèy
SI7148DP.pdf
RoHs Status
Nan stok: 27205

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SI7148DP-T1-GE3 Tech
Vishay Siliconix - SI7148DP-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI7148DP-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerPAK® SO-8  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 11mOhm @ 15A, 10V  
Dissipasyon pouvwa (Max) 5.4W (Ta), 96W (Tc)  
Pake / Ka PowerPAK® SO-8  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2900 pF @ 35 V  
Pòtay Charge (Qg) (Max) @ Vgs 100 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 75 V  
Kouran - Kontini Drain (Id) @ 25 ° C 28A (Tc)  
Nimewo pwodwi baz SI7148  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI7148DP-T1-GE3.

Pwodwi atribi SI7148DP-T1-GE3 SI7149DP-T1-GE3 SI7145DP-T1-GE3 SI7153DN-T1-GE3
Nimewo Pati SI7148DP-T1-GE3 SI7149DP-T1-GE3 SI7145DP-T1-GE3 SI7153DN-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Rds Sou (Max) @ Id, Vgs 11mOhm @ 15A, 10V 5.2mOhm @ 15A, 10V 2.6mOhm @ 25A, 10V 9.5mOhm @ 20A, 10V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Founisè Aparèy pake PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® 1212-8
Vgs (Max) ±20V ±25V ±20V ±25V
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 2900 pF @ 35 V 4590 pF @ 15 V 15660 pF @ 15 V 3600 pF @ 15 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kouran - Kontini Drain (Id) @ 25 ° C 28A (Tc) 50A (Tc) 60A (Tc) 18A (Tc)
Pake / Ka PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® 1212-8
Dissipasyon pouvwa (Max) 5.4W (Ta), 96W (Tc) 69W (Tc) 6.25W (Ta), 104W (Tc) 52W (Tc)
Fèt tip N-Channel P-Channel P-Channel P-Channel
Pòtay Charge (Qg) (Max) @ Vgs 100 nC @ 10 V 147 nC @ 10 V 413 nC @ 10 V 93 nC @ 10 V
Drenaj Sous Voltage (Vdss) 75 V 30 V 30 V 30 V
Nimewo pwodwi baz SI7148 SI7149 SI7145 SI7153
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Seri TrenchFET® TrenchFET® TrenchFET® -
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.3V @ 250µA 2.5V @ 250µA

SI7148DP-T1-GE3 fich PDF

Download SI7148DP-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SI7148DP-T1-GE3 - Vishay Siliconix.

Asanble PCN/orijin
New Solder Plating Site 18/Apr/2023.pdf
Fich
SI7148DP.pdf

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Sètifikasyon & Manm

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Vishay Siliconix

SI7148DP-T1-GE3

Vishay Siliconix
32D-SI7148DP-T1-GE3

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