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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySI7212DN-T1-E3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

SI7212DN-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SI7212DN-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI7212DN-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 30V 4.9A 1212-8
Pake
PowerPAK® 1212-8 Dual
Done fèy
SI7212DN.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 21680

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SI7212DN-T1-E3 Tech
Vishay Siliconix - SI7212DN-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI7212DN-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 1.6V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerPAK® 1212-8 Dual  
Seri -  
Rds Sou (Max) @ Id, Vgs 36mOhm @ 6.8A, 10V  
Pouvwa - Max 1.3W  
Pake / Ka PowerPAK® 1212-8 Dual  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds -  
Pòtay Charge (Qg) (Max) @ Vgs 11nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.9A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz SI7212  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI7212DN-T1-E3.

Pwodwi atribi SI7212DN-T1-E3 SI7214DN-T1-E3 SI7214DN-T1-GE3 SI7212DN-T1-GE3
Nimewo Pati SI7212DN-T1-E3 SI7214DN-T1-E3 SI7214DN-T1-GE3 SI7212DN-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Rds Sou (Max) @ Id, Vgs 36mOhm @ 6.8A, 10V 40mOhm @ 6.4A, 10V 40mOhm @ 6.4A, 10V 36mOhm @ 6.8A, 10V
Seri - TrenchFET® TrenchFET® -
Founisè Aparèy pake PowerPAK® 1212-8 Dual PowerPAK® 1212-8 Dual PowerPAK® 1212-8 Dual PowerPAK® 1212-8 Dual
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Nimewo pwodwi baz SI7212 SI7214 SI7214 SI7212
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vgs (th) (Max) @ Id 1.6V @ 250µA 3V @ 250µA 3V @ 250µA 1.6V @ 250µA
Pake / Ka PowerPAK® 1212-8 Dual PowerPAK® 1212-8 Dual PowerPAK® 1212-8 Dual PowerPAK® 1212-8 Dual
Kouran - Kontini Drain (Id) @ 25 ° C 4.9A 4.6A 4.6A 4.9A
Konfigirasyon 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pouvwa - Max 1.3W 1.3W 1.3W 1.3W
Drenaj Sous Voltage (Vdss) 30V 30V 30V 30V
Pòtay Charge (Qg) (Max) @ Vgs 11nC @ 4.5V 6.5nC @ 4.5V 6.5nC @ 4.5V 11nC @ 4.5V
Kapasite Antre (Ciss) (Max) @ Vds - - - -

SI7212DN-T1-E3 fich PDF

Download SI7212DN-T1-E3 PDF fich ak dokiman Vishay Siliconix pou SI7212DN-T1-E3 - Vishay Siliconix.

Asanble PCN/orijin
New Solder Plating Site 18/Apr/2023.pdf
Fich
SI7212DN.pdf
PCN konsepsyon/spesifikasyon
Mult Devices 18/Jul/2017.pdf

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Sètifikasyon & Manm

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Vishay Siliconix

SI7212DN-T1-E3

Vishay Siliconix
32D-SI7212DN-T1-E3

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