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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI7882DP-T1-E3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI7882DP-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SI7882DP-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI7882DP-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 12V 13A PPAK SO-8
Deskripsyon detaye
Pake
PowerPAK® SO-8
Done fèy
SI7882DP.pdf
RoHs Status
Nan stok: 4360

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SI7882DP-T1-E3 Tech
Vishay Siliconix - SI7882DP-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI7882DP-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 1.4V @ 250µA  
Vgs (Max) ±8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerPAK® SO-8  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 5.5mOhm @ 17A, 4.5V  
Dissipasyon pouvwa (Max) 1.9W (Ta)  
Pake / Ka PowerPAK® SO-8  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Pòtay Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 12 V  
Kouran - Kontini Drain (Id) @ 25 ° C 13A (Ta)  
Nimewo pwodwi baz SI7882  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI7882DP-T1-E3.

Pwodwi atribi SI7882DP-T1-E3 SI7884BDP-T1-E3 SI7880ADP-T1-GE3 SI7884BDP-T1-GE3
Nimewo Pati SI7882DP-T1-E3 SI7884BDP-T1-E3 SI7880ADP-T1-GE3 SI7884BDP-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Kouran - Kontini Drain (Id) @ 25 ° C 13A (Ta) 58A (Tc) 40A (Tc) 58A (Tc)
Drenaj Sous Voltage (Vdss) 12 V 40 V 30 V 40 V
Nimewo pwodwi baz SI7882 SI7884 SI7880 SI7884
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Founisè Aparèy pake PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8
FET Feature - - - -
Dissipasyon pouvwa (Max) 1.9W (Ta) 4.6W (Ta), 46W (Tc) 5.4W (Ta), 83W (Tc) 4.6W (Ta), 46W (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Pake / Ka PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8
Rds Sou (Max) @ Id, Vgs 5.5mOhm @ 17A, 4.5V 7.5mOhm @ 16A, 10V 3mOhm @ 20A, 10V 7.5mOhm @ 16A, 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Pòtay Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V 77 nC @ 10 V 125 nC @ 10 V 77 nC @ 10 V
Vgs (Max) ±8V ±20V ±20V ±20V
Vgs (th) (Max) @ Id 1.4V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA

SI7882DP-T1-E3 fich PDF

Download SI7882DP-T1-E3 PDF fich ak dokiman Vishay Siliconix pou SI7882DP-T1-E3 - Vishay Siliconix.

Asanble PCN/orijin
Multiple Fabracation Changes09/Jul/2014.pdf
PCN obsolescence/ eol
SIL-1072014 Rev0 17/Dec/2014.pdf
Fich
SI7882DP.pdf

Shipment

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Sètifikasyon & Manm

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Vishay Siliconix

SI7882DP-T1-E3

Vishay Siliconix
32D-SI7882DP-T1-E3

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