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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI7892BDP-T1-GE3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

SI7892BDP-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SI7892BDP-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI7892BDP-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 15A PPAK SO-8
Pake
PowerPAK® SO-8
Done fèy
SI7892BDP-T1-GE3.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 49680

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon SI7892BDP-T1-GE3 Tech
Vishay Siliconix - SI7892BDP-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI7892BDP-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 3V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerPAK® SO-8  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 4.2mOhm @ 25A, 10V  
Dissipasyon pouvwa (Max) 1.8W (Ta)  
Pake / Ka PowerPAK® SO-8  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3775 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 40 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 15A (Ta)  
Nimewo pwodwi baz SI7892  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI7892BDP-T1-GE3.

Pwodwi atribi SI7892BDP-T1-GE3 SI7892BDP-T1-E3 SI7888DP-T1-E3 SI7898DP-T1-E3
Nimewo Pati SI7892BDP-T1-GE3 SI7892BDP-T1-E3 SI7888DP-T1-E3 SI7898DP-T1-E3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kouran - Kontini Drain (Id) @ 25 ° C 15A (Ta) 15A (Ta) 9.4A (Ta) 3A (Ta)
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 150 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Dissipasyon pouvwa (Max) 1.8W (Ta) 1.8W (Ta) 1.8W (Ta) 1.9W (Ta)
Vgs (th) (Max) @ Id 3V @ 250µA 3V @ 250µA 2V @ 250µA 4V @ 250µA
Nimewo pwodwi baz SI7892 SI7892 SI7888 SI7898
Rds Sou (Max) @ Id, Vgs 4.2mOhm @ 25A, 10V 4.2mOhm @ 25A, 10V 12mOhm @ 12.4A, 10V 85mOhm @ 3.5A, 10V
FET Feature - - - -
Founisè Aparèy pake PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8
Pòtay Charge (Qg) (Max) @ Vgs 40 nC @ 4.5 V 40 nC @ 4.5 V 10.5 nC @ 5 V 21 nC @ 10 V
Kapasite Antre (Ciss) (Max) @ Vds 3775 pF @ 15 V 3775 pF @ 15 V - -
Pake / Ka PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8 PowerPAK® SO-8
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (Max) ±20V ±20V ±12V ±20V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 6V, 10V

SI7892BDP-T1-GE3 fich PDF

Download SI7892BDP-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SI7892BDP-T1-GE3 - Vishay Siliconix.

PCN konsepsyon/spesifikasyon
Mult Dev 07/Jun/2023.pdf New solder paste 26/May/2023.pdf
Asanble PCN/orijin
New Solder Plating Site 18/Apr/2023.pdf

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Vishay Siliconix

SI7892BDP-T1-GE3

Vishay Siliconix
32D-SI7892BDP-T1-GE3

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