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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySI7904BDN-T1-E3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI7904BDN-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SI7904BDN-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI7904BDN-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 20V 6A 1212-8
Deskripsyon detaye
Pake
PowerPAK® 1212-8 Dual
Done fèy
SI7904BDN-T1-E3.pdf
RoHs Status
Nan stok: 53930

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon SI7904BDN-T1-E3 Tech
Vishay Siliconix - SI7904BDN-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI7904BDN-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 1V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerPAK® 1212-8 Dual  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 30mOhm @ 7.1A, 4.5V  
Pouvwa - Max 17.8W  
Pake / Ka PowerPAK® 1212-8 Dual  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 860pF @ 10V  
Pòtay Charge (Qg) (Max) @ Vgs 24nC @ 8V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 20V  
Kouran - Kontini Drain (Id) @ 25 ° C 6A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz SI7904  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI7904BDN-T1-E3.

Pwodwi atribi SI7904BDN-T1-E3 SI7900AEDN-T1-GE3 SI7904BDN-T1-GE3 SI7901EDN-T1-E3
Nimewo Pati SI7904BDN-T1-E3 SI7900AEDN-T1-GE3 SI7904BDN-T1-GE3 SI7901EDN-T1-E3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Founisè Aparèy pake PowerPAK® 1212-8 Dual PowerPAK® 1212-8 Dual PowerPAK® 1212-8 Dual PowerPAK® 1212-8 Dual
Konfigirasyon 2 N-Channel (Dual) 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Kouran - Kontini Drain (Id) @ 25 ° C 6A 6A 6A 4.3A
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss) 20V 20V 20V 20V
Pake / Ka PowerPAK® 1212-8 Dual PowerPAK® 1212-8 Dual PowerPAK® 1212-8 Dual PowerPAK® 1212-8 Dual
Vgs (th) (Max) @ Id 1V @ 250µA 900mV @ 250µA 1V @ 250µA 1V @ 800µA
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pòtay Charge (Qg) (Max) @ Vgs 24nC @ 8V 16nC @ 4.5V 24nC @ 8V 18nC @ 4.5V
Nimewo pwodwi baz SI7904 SI7900 SI7904 SI7901
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 860pF @ 10V - 860pF @ 10V -
Pouvwa - Max 17.8W 1.5W 17.8W 1.3W
Rds Sou (Max) @ Id, Vgs 30mOhm @ 7.1A, 4.5V 26mOhm @ 8.5A, 4.5V 30mOhm @ 7.1A, 4.5V 48mOhm @ 6.3A, 4.5V

SI7904BDN-T1-E3 fich PDF

Download SI7904BDN-T1-E3 PDF fich ak dokiman Vishay Siliconix pou SI7904BDN-T1-E3 - Vishay Siliconix.

Asanble PCN/orijin
New Solder Plating Site 18/Apr/2023.pdf
PCN konsepsyon/spesifikasyon
Mult Devices 18/Jul/2017.pdf

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Sètifikasyon & Manm

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Vishay Siliconix

SI7904BDN-T1-E3

Vishay Siliconix
32D-SI7904BDN-T1-E3

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