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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySI7980DP-T1-E3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI7980DP-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SI7980DP-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI7980DP-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 20V 8A PPAK SO-8
Deskripsyon detaye
Pake
PowerPAK® SO-8 Dual
Done fèy
SI7980DP.pdf
RoHs Status
Nan stok: 4580

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Kantite

Espesifikasyon

Espesifikasyon SI7980DP-T1-E3 Tech
Vishay Siliconix - SI7980DP-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI7980DP-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerPAK® SO-8 Dual  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 22mOhm @ 5A, 10V  
Pouvwa - Max 19.8W, 21.9W  
Pake / Ka PowerPAK® SO-8 Dual  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1010pF @ 10V  
Pòtay Charge (Qg) (Max) @ Vgs 27nC @ 10V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 20V  
Kouran - Kontini Drain (Id) @ 25 ° C 8A  
Konfigirasyon 2 N-Channel (Half Bridge)  
Nimewo pwodwi baz SI7980  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI7980DP-T1-E3.

Pwodwi atribi SI7980DP-T1-E3 SI7997DP-T1-GE3 SI7980DP-T1-GE3 SI7960DP-T1-GE3
Nimewo Pati SI7980DP-T1-E3 SI7997DP-T1-GE3 SI7980DP-T1-GE3 SI7960DP-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Kapasite Antre (Ciss) (Max) @ Vds 1010pF @ 10V 6200pF @ 15V 1010pF @ 10V -
FET Feature - - - Logic Level Gate
Rds Sou (Max) @ Id, Vgs 22mOhm @ 5A, 10V 5.5mOhm @ 20A, 10V 22mOhm @ 5A, 10V 21mOhm @ 9.7A, 10V
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Drenaj Sous Voltage (Vdss) 20V 30V 20V 60V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Konfigirasyon 2 N-Channel (Half Bridge) 2 P-Channel (Dual) 2 N-Channel (Half Bridge) 2 N-Channel (Dual)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Nimewo pwodwi baz SI7980 SI7997 SI7980 SI7960
Pòtay Charge (Qg) (Max) @ Vgs 27nC @ 10V 160nC @ 10V 27nC @ 10V 75nC @ 10V
Kouran - Kontini Drain (Id) @ 25 ° C 8A 60A 8A 6.2A
Pouvwa - Max 19.8W, 21.9W 46W 19.8W, 21.9W 1.4W
Pake / Ka PowerPAK® SO-8 Dual PowerPAK® SO-8 Dual PowerPAK® SO-8 Dual PowerPAK® SO-8 Dual
Founisè Aparèy pake PowerPAK® SO-8 Dual PowerPAK® SO-8 Dual PowerPAK® SO-8 Dual PowerPAK® SO-8 Dual
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 3V @ 250µA

SI7980DP-T1-E3 fich PDF

Download SI7980DP-T1-E3 PDF fich ak dokiman Vishay Siliconix pou SI7980DP-T1-E3 - Vishay Siliconix.

Fich
SI7980DP.pdf

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Vishay Siliconix

SI7980DP-T1-E3

Vishay Siliconix
32D-SI7980DP-T1-E3

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